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參數(shù)資料
| 型號： | KDS135 |
| 廠商： | KEC Holdings |
| 英文描述： | SILICON EPITAXIAL PLANAR DIODE (HIGH VOLTAGE SWITCHING) |
| 中文描述： | 硅外延平面二極管（高壓開關(guān)） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 69K |
| 代理商： | KDS135 |
2001. 6. 11
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDS135
SILICON EPITAXIAL PLANAR DIODE
Revision No : 0
High Voltage Switching.
FEATURES
High Reliability.
Small surface mounting type (USC).
MAXIMUM RATING (Ta=25
)
USC
DIM
A
MILLIMETERS
2.50 0.1
1.25 0.05
0.90 0.05
0.30+0.06/-0.04
1.70+
MIN 0.17
0.126+
0~0.1
1.0 MAX
+
+
B
C
D
E
F
G
H
I
J
K
L
M
0.15 0.05
0.4 0.05
2 +4/-2
4~6
C
M
M
I
C
J
G
D
2
1
B
1. ANODE
2. CATHODE
E
K
A
F
H
L
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
300
V
Reverse Voltage
V
R
250
V
Maximum (Peak) Forward Current
I
FM
300
mA
Average Forward Current
I
O
100
mA
Surge Current (10mS)
I
FSM
2
A
Power Dissipation
P
D
150*
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
* Mounted on a glass epoxy cirvuit board of 20
20mm
Pad dimension of 4
4mm
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
F
=100mA
-
1.0
1.2
V
Reverse Current
I
R(1)
V
R
=250V
-
0.04
0.2
A
I
R(2)
V
R
=300V
-
-
100
Total Capacitance
C
T
V
R
=0V, f=1MHz
-
1.35
3
pF
Reverse Recovery Time
t
rr
I
R
=30mA, I
F
=30mA
-
30
100
nS
Type Name
Marking
A
J
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