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參數(shù)資料
| 型號： | KDR784 |
| 廠商： | KEC Holdings |
| 英文描述： | SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) |
| 中文描述： | 肖特基型二極管（低壓高速開關(guān)） |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 381K |
| 代理商： | KDR784 |
2003. 2. 25
1/1
SEMICONDUCTOR
TECHNICAL DATA
KDR784
SCHOTTKY BARRIER TYPE DIODE
Revision No : 2
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : V
F(3)
=0.42V(Typ.)
Small Package : USC.
MAXIMUM RATING (Ta=25
)
USC
DIM
MILLIMETERS
+
+
A
B
C
D
E
F
G
H
J
K
2.50 0.1
1.25+
0.90 0.05
0.30+0.06/-0.04
1.70+
MIN 0.17
0.126+
0~0.1
0.15 0.05
+
+
0.4 0.05
2 +4/-2
L
M
4~6
I
1.0 MAX
C
M
M
I
C
J
G
D
2
1
B
1. ANODE
2. CATHODE
E
K
A
F
H
L
* : Mounted on a glass epoxy circuit board of 20
pad dimension of 4
20mm,
4mm.
ELECTRICAL CHARACTERISTICS (Ta=25
)
Type Name
Marking
U
U
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
30
V
Reverse Voltage
V
R
30
V
Maximum (Peak) Forward Current
I
FM
300
mA
Average Forward Current
I
O
100
mA
Surge Current (10ms)
I
FSM
1
A
Power Dissipation
P
D
200*
mW
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55
125
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.26
0.35
V
V
F(2)
I
F
=5mA
-
0.30
0.40
V
F(3)
I
F
=100mA
-
0.42
0.55
Reverse Current
I
R
V
R
=30V
-
-
15
A
Total Capacitance
C
T
V
R
=1V, f=1MHz
-
40
-
pF
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