- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373116 > KBU6M (DIOTEC SEMICONDUCTOR AG) RES SMT 0402 1/16W 28K OHM 1% PDF資料下載
參數(shù)資料
| 型號： | KBU6M |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | RES SMT 0402 1/16W 28K OHM 1% |
| 中文描述： | 4.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | 23.50 X 19.30 MM, 5.70 MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 171K |
| 代理商： | KBU6M |
Symbols
KBU4A
KBU6A
KBU8A
RS601
KBU4B
KBU6B
KBU8B
RS602
KBU4D
KBU6D
KBU8D
RS603
KBU4G
KBU6G
KBU8G
RS604
KBU4J
KBU6J
KBU8J
RS605
KBU4K
KBU6K
KBU8K
RS606
KBU4M
KBU6M
KBU8M
RS607
Units
Maximum repetitive peak reverse voltage
V
RRM
50
100
200
400
600
800
1000
Volts
Maximum RMS bridge input voltage
V
RMS
35
70
140
280
420
560
700
Volts
Maximum DC blocking voltage
V
DC
50
100
200
400
600
800
1000
Volts
Maximum average forward T
C
=100
rectified output current at T
A
=65
/40
/45
I
(AV)
KBU4
4.0
4.0
KBU6
RS6
6.0
6.0
KBU8
8.0
6.0
/
Amps
Peak forward surge current, 8.3mS single half sine-wave
superimposed on rated load
(MIL-STD-750 method 4066)
I
FSM
200.0
250.0
300.0
Amps
Maximum instantanous forward Voltage drop per
element at 3.0A/3.0A/8.0A
V
F
1.0
1.0
1.0
Volt
Maximum DC reverse leakage at rated T
A
=25
DC blocking voltage per element T
C
=100
I
R
10.0
100.0
10.0
200.0
10.0
300.0
uA
mA
Operating and storage temperature range
T
J
, T
STG
-65 to +150
Features
KBU4,6,8/RS6 SERIES
SINGLE-PHASE SILICON BRIDGE
Reverse Voltage -
50 to 1000 Volts
Forward Current -
4.0/6.0/8.0 Amperes
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique
Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
Surge overload rating: 200 amperes peak
Mounting Position: Any
Mounting Torgue: 5 ln. Ib. max.
Maximum Ratings and Electrical Characteristics
Ratings at 25
For capacitive load, derate current by 20%.
ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
D IM E N SIO N S
D IM
inches
m m
N ote
M in.
M ax.
M in.
M ax.
A
-
0.760
-
19.3
B
1.0
-
25.4
-
C
0.895
0.935
22.7
23.7
D
0.260
0.280
6.6
7.1
E
0.165
0.185
4.2
4.7
F
0.140
0.160
3.6
4.1
G
0.065
0.085
1.7
2.2
H
0.660
0.700
16.8
17.8
H 1
0.405
0.455
10.3
11.3
J
0.180
0.260
4.5
6.6
K
0.180
0.220
4.6
5.6
M
0.185
0.205
4.7
5.2
N
0.048
0.052
1.2
1.3
P
0.075 (1.9) R . Typ. (2 Places)
Q
45
O
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KBU4G | RP20 (FW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 12V; 4:1 Wide Input Voltage Range; 20 Watts Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63??C; Standard 2? x 1? Package and Pinning; Efficiency to 86% |
| KBU4 | Silicon-Bridge Rectifiers |
| KBU6D | Silicon-Bridge Rectifiers |
| KBU6G | Silicon-Bridge Rectifiers |
| KBU6K | Silicon-Bridge Rectifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KBU6M _B0 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| KBU6M_Q | 功能描述:橋式整流器 6A Bridge Rectifier RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| KBU6M-E4 | 制造商:Vishay Intertechnologies 功能描述:Bridge Rectifier Single 1KV 6A KBU4 |
| KBU6M-E4/1 | 制造商:Vishay Angstrohm 功能描述:Diode Rectifier Bridge Single 1KV 6A 4-Pin Case KBU Bulk |
| KBU6M-E4/51 | 功能描述:橋式整流器 6.0 Amp 1000 Volt RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。