參數(shù)資料
型號(hào)： KBU6K
廠(chǎng)商： DC Components Co., Ltd.
元件分類(lèi)： 參考電壓二極管
英文描述： TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
中文描述： 技術(shù)規(guī)格單相硅橋式整流器
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 171K
代理商： KBU6K
Symbols
KBU4A
KBU6A
KBU8A
RS601
KBU4B
KBU6B
KBU8B
RS602
KBU4D
KBU6D
KBU8D
RS603
KBU4G
KBU6G
KBU8G
RS604
KBU4J
KBU6J
KBU8J
RS605
KBU4K
KBU6K
KBU8K
RS606
KBU4M
KBU6M
KBU8M
RS607
Units
Maximum repetitive peak reverse voltage
V
RRM
50
100
200
400
600
800
1000
Volts
Maximum RMS bridge input voltage
V
RMS
35
70
140
280
420
560
700
Volts
Maximum DC blocking voltage
V
DC
50
100
200
400
600
800
1000
Volts
Maximum average forward T
C
=100
rectified output current at T
A
=65
/40
/45
I
(AV)
KBU4
4.0
4.0
KBU6
RS6
6.0
6.0
KBU8
8.0
6.0
/
Amps
Peak forward surge current, 8.3mS single half sine-wave
superimposed on rated load
(MIL-STD-750 method 4066)
I
FSM
200.0
250.0
300.0
Amps
Maximum instantanous forward Voltage drop per
element at 3.0A/3.0A/8.0A
V
F
1.0
1.0
1.0
Volt
Maximum DC reverse leakage at rated T
A
=25
DC blocking voltage per element T
C
=100
I
R
10.0
100.0
10.0
200.0
10.0
300.0
uA
mA
Operating and storage temperature range
T
J
, T
STG
-65 to +150
Features
KBU4,6,8/RS6 SERIES
SINGLE-PHASE SILICON BRIDGE
Reverse Voltage -
50 to 1000 Volts
Forward Current -
4.0/6.0/8.0 Amperes
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique
Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
Surge overload rating: 200 amperes peak
Mounting Position: Any
Mounting Torgue: 5 ln. Ib. max.
Maximum Ratings and Electrical Characteristics
Ratings at 25
For capacitive load, derate current by 20%.
ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
D IM E N SIO N S
D IM
inches
m m
N ote
M in.
M ax.
M in.
M ax.
A
-
0.760
-
19.3
B
1.0
-
25.4
-
C
0.895
0.935
22.7
23.7
D
0.260
0.280
6.6
7.1
E
0.165
0.185
4.2
4.7
F
0.140
0.160
3.6
4.1
G
0.065
0.085
1.7
2.2
H
0.660
0.700
16.8
17.8
H 1
0.405
0.455
10.3
11.3
J
0.180
0.260
4.5
6.6
K
0.180
0.220
4.6
5.6
M
0.185
0.205
4.7
5.2
N
0.048
0.052
1.2
1.3
P
0.075 (1.9) R . Typ. (2 Places)
Q
45
O
1
相關(guān)PDF資料
PDF描述
KBU6M TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
KBU8M TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
KBU8B TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
KBU6B TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
KBU4G RP20 (F) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 20 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 89%
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KBU6K _B0 _10001 制造商:PanJit Touch Screens 功能描述:
KBU6K/1 制造商:Vishay Semiconductors 功能描述:Diode Rectifier Bridge Single 800V 6A 4-Pin Case KBU Bulk
KBU6K_Q 功能描述:橋式整流器 6A Bridge Rectifier RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長(zhǎng)度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube
KBU6K-E4/1 制造商:Vishay Angstrohm 功能描述:Diode Rectifier Bridge Single 800V 6A 4-Pin Case KBU Bulk
KBU6K-E4/51 功能描述:橋式整流器 6.0 Amp 800 Volt RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長(zhǎng)度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube
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