參數(shù)資料
型號： KBP08
廠商： DC Components Co., Ltd.
元件分類： 參考電壓二極管
英文描述： TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
中文描述： 技術規(guī)格單相硅橋式整流器
文件頁數(shù)： 1/2頁
文件大?。?/td> 48K
代理商： KBP08
Symbols
KBP005
KBP01
KBP02
KBP04
KBP06
KBP08
KBP10
Units
Maximum repetitive peak reverse voltage
V
RRM
50
100
200
400
600
800
1000
Volts
Maximum RMS bridge input voltage
V
RMS
35
70
140
280
420
560
700
Volts
Maximum DC blocking voltage
V
DC
50
100
200
400
600
800
1000
Volts
Maximum average forward rectified output current
at T
A
=50
I
(AV)
2.0
Amps
Peak forward surge current, 8.3mS single
half sine-wave superimposed on rated load
I
FSM
50.0
Amps
Maximum forward Voltage drop per bridge element
at 1.0A peak
V
F
1.0
Volt
Maximum DC reverse current at rated
DC blocking voltage per element
I
R
10.0
A
Maximum DC reverse current at rated
DC blocking voltage per element T
A
=100
I
R
1.0
mA
Operating temperature range
T
J
-55 to +125
Storage temperature range
T
STG
-55 to +150
Features
KBP005 THRU KBP10
SINGLE-PHASE SILICON BRIDGE
Reverse Voltage -
50 to 1000 Volts
Forward Current -
2.0 Amperes
Surge overload rating - 50 amperes peak
Ideal for printed circuit board
Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
Mounting Position: Any
Lead: Silver plated copper lead
Maximum Ratings and Electrical Characteristics
Ratings at 25
For capacitive load, derate current by 20%.
ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
1
DIM ENSIONS
DIM
inches
m m
Note
M in.
M ax.
M in.
M ax.
A
-
0.504
-
12.8
B
0.75
-
19.0
-
C
-
0.693
-
17.6
D
-
0.25
-
6.4
E
-
0.125
-
3.2
F
-
0.15
-
3.8
G
0.32 Typ.
0.8 Typ.
相關PDF資料
PDF描述
KBP06 TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
KBP005 Tantalum Molded Capacitor; Capacitance: 3.3uF; Voltage: 6.3V; Case Size: 3.2x1.6 mm; Packaging: Tape & Reel
KBP01 Tantalum Molded Capacitor; Capacitance: 47uF; Voltage: 6.3V; Case Size: 3.4x1.9 mm; Packaging: Tape & Reel
KBP02 TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
KBP04 TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
相關代理商/技術參數(shù)
參數(shù)描述
KBP08G 功能描述:橋式整流器 1.5A 800V RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube
KBP08G-7 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:1.5A GLASS PASSIVATED BRIDGE RECTIFIER
KBP08G-E 制造商:GULFSEMI 制造商全稱:Gulf Semiconductor 功能描述:SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 800V Current:1.5A
KBP08M 功能描述:橋式整流器 1.5A Bridge RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube
KBP08M _B0 _10001 制造商:PanJit Touch Screens 功能描述:
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