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參數(shù)資料
| 型號(hào)： | KBE00S009M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 |
| 中文描述： | 1Gb的NAND × 2 256Mb的移動(dòng)SDRAM × 2 |
| 文件頁(yè)數(shù)： | 39/86頁(yè) |
| 文件大?。?/td> | 1898K |
| 代理商： | KBE00S009M |
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MCP MEMORY
39
KBE00S009M-D411
Revision 1.0
May 2005
Figure 19-2. Read ID (2) Operation
CE
CLE
I/O
0
~
7
ALE
RE
WE
91h
00h
20h
Address. 1cycle
Extended ID Code
t
CEA
t
AR
t
REA
t
WHR
Figure 20. RESET Operation
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 5 for device status after reset operation. If the device is
already in reset state a new reset command will not be accepted by the command register. The R/B pin transitions to low for tRST
after the Reset command is written. Refer to Figure 20 below.
After Power-up
After Reset
Operation Mode
Read 1
Waiting for next command
FFh
I/O
0
~
7
R/B
Table5. Device Status
t
RST
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KBE00S009M-D411 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 |
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