參數(shù)資料
型號： KA5X03XX
廠商： Fairchild Semiconductor Corporation
英文描述： Fairchild Power Switch(FPS)
中文描述： 飛兆半導(dǎo)體功率開關(guān)（FPS）
文件頁數(shù)： 4/20頁
文件大?。?/td> 944K
代理商： KA5X03XX
KA5X03XX-SERIES
4
Electrical Characteristics (SenseFET Part)
(Ta = 25
°
C unless otherwise specified)
Note:
1.
Pulse test: Pulse width
≤
300
μ
S, duty
≤
2%
2.
S
R
Parameter
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage
Symbol
Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS
=0V, I
D
=50
μ
A
V
DS
=Max. Rating, V
GS
=0V
V
DS
=0.8Max. Rating,
V
GS
=0V, T
C
=125
°
C
V
GS
=10V, I
D
=0.5A
V
DS
=50V, I
D
=0.5A
650
-
-
-
-
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
50
-
-
200
μ
A
Static Drain-Source on Resistance
(Note)
Forward Transconductance
(Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
R
DS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
-
3.6
-
720
40
40
150
100
150
42
4.5
-
-
-
-
-
-
-
-
S
2.0
-
-
-
-
-
-
-
V
GS
=0V, V
DS
=25V,
f=1MHz
pF
V
DD
=0.5BV
DSS
, I
D
=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time is essentially
independent of
operating temperature)
nS
Qg
-
-
34
nC
Qgs
-
7.3
-
Gate-Drain (Miller) Charge
Qgd
-
13.3
-
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=50
μ
A
V
DS
=Max. Rating, V
GS
=0V
V
DS
=0.8Max. Rating,
V
GS
=0V, T
C
=125
°
C
V
GS
=10V, I
D
=0.5A
V
DS
=50V, I
D
=0.5A
800
-
-
-
-
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
250
-
-
1000
μ
A
Static Drain-Source on Resistance
(Note)
Forward Transconductance
(Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
R
DS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
-
4.0
2.5
779
75.6
24.9
40
95
150
60
5.0
-
-
-
-
-
-
-
-
S
1.5
-
-
-
-
-
-
-
V
GS
=0V, V
DS
=25V,
f=1MHz
pF
V
DD
=0.5BV
DSS
, I
D
=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time is
essentially independent of
operating temperature)
nS
Qg
-
-
34
nC
Qgs
-
7.2
-
Qgd
-
12.1
-
1
---
=
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