參數(shù)資料
型號: KA5S
廠商: Fairchild Semiconductor Corporation
英文描述: Fairchild Power Switch(FPS)
中文描述: 飛兆半導(dǎo)體功率開關(guān)(FPS)
文件頁數(shù): 6/20頁
文件大小: 254K
代理商: KA5S
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
6
Electrical Characteristics (SFET Part; Continued)
(Ta = 25
°
C unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
KA5S0965
Drain-source breakdown voltage
BV
DSS
V
GS
=0V, I
D
=50
μ
A
V
DS
=Max., Rating, V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125
°
C
V
GS
=10V, I
D
=4.5A
V
DS
=50V, I
D
=4.5A
650
-
-
-
-
V
μ
A
Zero gate voltage drain current
I
DSS
50
-
-
200
μ
A
Static drain-source on resistance
(1)
Forward transconductance
(1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
R
DS
(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
-
0.96
-
1750
190
78
20
23
85
30
1.2
-
-
-
-
50
55
180
70
S
5.0
-
-
-
-
-
-
-
V
GS
=0V, V
DS
=25V,
f = 1MHz
pF
V
DD
=0.5BV
DSS
, I
D
=9.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=9.0A,
V
DS
=0.5BV
DSS
(MOSFET
Switching time are
Essentially independent of
Operating temperature)
nS
Qg
-
74
95
nC
Qgs
-
12
-
Gate-drain (Miller) charge
Qgd
-
35
-
KA5S12656
Drain-source breakdown voltage
BV
DSS
V
GS
=0V, I
D
=50
μ
A
V
DS
=Max., Rating, V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125
°
C
V
GS
=10V, I
D
=6.0A
V
DS
=50V, I
D
=4.0A
650
-
-
-
-
V
μ
A
Zero gate voltage drain current
I
DSS
50
-
-
200
μ
A
Static drain-source on resistance
(1)
Forward transconductance
(1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
R
DS
(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
-
0.72
-
2700
300
61
18
37
88
36
0.9
-
-
-
-
-
-
-
-
S
5.7
-
-
-
-
-
-
-
V
GS
=0V, V
DS
=25V,
f = 1MHz
pF
V
DD
=0.5BV
DSS
, I
D
=12.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=12.0A,
V
DS
=0.5BV
DSS
(MOSFET
Switching time are
Essentially independent of
Operating temperature)
nS
Qg
-
-
140
nC
Qgs
-
20
-
Gate-drain (Miller) charge
Qgd
-
69
-
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