參數(shù)資料
型號(hào): KA5S1265
廠商: Fairchild Semiconductor Corporation
英文描述: Fairchild Power Switch(FPS)
中文描述: 飛兆半導(dǎo)體功率開(kāi)關(guān)(FPS)
文件頁(yè)數(shù): 5/20頁(yè)
文件大?。?/td> 254K
代理商: KA5S1265
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/
5
Electrical Characteristics (SFET Part)
(Ta = 25
°
C unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
KA5S0765C
Drain-source breakdown voltage
BV
DSS
V
GS
=0V, I
D
=50
μ
A
V
DS
=Max., Rating, V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125
°
C
V
GS
=10V, I
D
=4.0A
V
DS
=15V, I
D
=4.0A
650
-
-
-
-
V
μ
A
Zero gate voltage drain current
I
DSS
50
-
-
200
μ
A
Static drain-source on resistance
(1)
Forward transconductance
(1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
R
DS
(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
-
1.25
-
1600
310
120
25
55
80
50
1.6
-
-
-
-
-
-
-
-
S
3.0
-
-
-
-
-
-
-
V
GS
=0V, V
DS
=25V,
f = 1MHz
pF
V
DD
=0.5BV
DSS
, I
D
=7.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=7.0A,
V
DS
=0.5BV
DSS
(MOSFET
Switching time are
Essentially independent of
Operating temperature)
nS
Qg
-
-
72
nC
Qgs
-
9.3
-
Gate-drain (Miller) charge
Qgd
-
29.3
-
KA5S09654QT
Drain-source breakdown voltage
BV
DSS
V
GS
=0V, I
D
=50
μ
A
V
DS
=Max., Rating, V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125
°
C
V
GS
=10V, I
D
=4.5A
V
DS
=50V, I
D
=4.5A
650
-
-
-
-
V
μ
A
Zero gate voltage drain current
I
DSS
200
-
-
300
μ
A
Static drain-source on resistance
(1)
Forward transconductance
(1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
R
DS
(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
-
1.1
-
1300
135
25
25
75
130
70
1.2
-
-
-
-
-
-
-
-
S
3.0
-
-
-
-
-
-
-
V
GS
=0V, V
DS
=25V,
f = 1MHz
pF
V
DD
=0.5BV
DSS
, I
D
=9.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=9.0A,
V
DS
=0.5BV
DSS
(MOSFET
Switching time are
Essentially independent of
Operating temperature)
nS
Qg
45
-
nC
Qgs
-
8
-
Gate-drain (Miller) charge
Qgd
-
22
-
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