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參數(shù)資料
| 型號(hào)： | KA5M0380R-YDTU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | SPS consist of high voltage power SenseFET and current mode PWM IC |
| 中文描述： | 12 A SWITCHING REGULATOR, 67 kHz SWITCHING FREQ-MAX, PZFM4 |
| 封裝： | TO-220F, 4 PIN |
| 文件頁(yè)數(shù)： | 3/14頁(yè) |
| 文件大小： | 268K |
| 代理商： | KA5M0380R-YDTU |
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KA5H0380R/KA5M0380R/KA5L0380R
3
Electrical Characteristics (SFET part)
(Ta = 25
°
C unless otherwise specified)
Note:
Pulse test: Pulse width < 300
μ
S, duty < 2%
S
R
Characteristic
Symbol
BV
DSS
Test condition
Min.
Typ.
Max.
Unit
Drain-source breakdown voltage
V
GS
=0V, I
D
=50
μ
A
800
V
Zero gate voltage drain current
I
DSS
V
DS
=Max., Rating,
V
GS
=0V
250
μ
A
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125
°
C
1000
μ
A
Static drain-source on resistance
(note)
Forward transconductance
(note)
R
DS(ON)
V
GS
=10V, I
D
=0.5A
4
5
g
fs
V
DS
=50V, I
D
=0.5A
1.5
2.5
S
Input capacitance
C
iss
V
GS
=0V, V
DS
=25V,
f=1MHz
779
pF
Output capacitance
C
oss
75.6
Reverse transfer capacitance
C
rss
24.9
Turn on delay time
t
d(on)
V
DD
=0.5BV
DSS
, I
D
=1.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
40
nS
Rise time
t
r
95
Turn off delay time
t
d(off)
150
Fall time
t
f
60
Total gate charge
(gate-source+gate-drain)
Q
g
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time are
essentially independent of
operating temperature)
34
nC
Gate-source charge
Q
gs
7.2
Gate-drain (Miller) charge
Q
gd
12.1
1
---
=
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