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SILICON TRANSISTOR
KA4xxx
RESISTOR BUILT-IN TYPE NPN TRANSISTOR
DATA SHEET
Document No. D16495EJ3V0DS00 (3rd edition)
Date Published October 2004 NS CP(K)
Printed in Japan
2002
The mark
shows major revised points.
FEATURES
Compact package
Resistors built-in type
Complementary to KN4xxx
ORDERING INFORMATION
PART NUMBER
PACKAGE
KA4xxx
SC-75 (USM)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
V
CBO
60
V
Collector to Emitter Voltage
V
CEO
50
V
Emitter to Base Voltage
V
EBO
5
V
Collector Current (DC)
Collector Current (pulse)
Note
I
C
0.1
A
I
C(pulse)
0.2
A
Total Power Dissipation
P
T
0.2
W
Junction Temperature
T
j
150
°C
Storage Temperature
Note
PW
≤
10 ms, Duty Cycle
≤
50%
T
stg
–55 to +150
°C
PART NUMBER
MARK
R
1
R
2
UNIT
PART NUMBER
MARK
R
1
R
2
UNIT
KA4A4M
A4
10.0
10.0
k
KA4L4L
K4
47.0
22.0
k
KA4F4M
B4
22.0
22.0
k
KA4A4Z
Y4
10.0
k
KA4L4M
C4
47.0
47.0
k
KA4F4Z
Z4
22.0
k
KA4L3M
D4
4.7
4.7
k
KA4L4Z
N4
47.0
k
KA4L3N
E4
4.7
10.0
k
KA4F3M
P4
2.2
2.2
k
KA4L3Z
F4
4.7
k
KA4F3P
Q4
2.2
10.0
k
KA4A3Q
G4
1.0
10.0
k
KA4F3R
R4
2.2
47.0
k
KA4A4P
H4
10.0
47.0
k
KA4A4L
S4
10.0
4.7
k
KA4F4N
X4
22.0
47.0
k
KA4L4K
T4
47.0
10.0
k
PACKAGE DRAWING (Unit: mm)
0.6
0.75
±
0.05
0 to 0.1
0.15
+0.1
1
0
0.5
2
1
3
1.0
1.6 ± 0.1
0.2
+0.1
–0
0.5
0.3
+0.1
–0
EQUIVALENT CIRCUIT
2
R
1
R
2
1
3
PIN CONNECTION
1: Emitter
2: Base
3: Collector