參數(shù)資料
型號(hào)： K9K2G08U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
中文描述： 256M × 8位/ 128M的× 16位NAND閃存
文件頁(yè)數(shù)： 3/39頁(yè)
文件大?。?/td> 680K
代理商： K9K2G08U0M
FLASH MEMORY
3
K9W4G08U1M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
K9K2G08Q0M
GENERAL DESCRIPTION
Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost-
effective solution for the solid state mass storage market. A program operation can be performed in typical 300
μ
s on the 2112-byte(X8
device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-
word(X16 device) block. Data in the data page can be read out at 80ns(1.8V device) or 50ns(3.3V device) cycle time per byte(X8
device) or word(X16 device). The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip
write controller automates all program and erase functions including pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take advantage of the K9K2GXXX0M
′
s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K2GXXX0M is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
An ultra high density solution having two 2Gb stacked with two chip selects is also available in standard TSOPI package.
FEATURES
Voltage Supply
-1.8V device(K9K2GXXQ0M): 1.7V~1.95V
-3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V
Organization
- Memory Cell Array
-X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit
-X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit
- Data Register
-X8 device(K9K2G08X0M): (2K + 64)bit x8bit
-X16 device(K9K2G16X0M): (1K + 32)bit x16bit
- Cache Register
-X8 device(K9K2G08X0M): (2K + 64)bit x8bit
-X16 device(K9K2G16X0M): (1K + 32)bit x16bit
Automatic Program and Erase
- Page Program
-X8 device(K9K2G08X0M): (2K + 64)Byte
-X16 device(K9K2G16X0M): (1K + 32)Word
- Block Erase
-X8 device(K9K2G08X0M): (128K + 4K)Byte
-X16 device(K9K2G16X0M): (64K + 2K)Word
Page Read Operation
- Page Size
- X8 device(K9K2G08X0M): 2K-Byte
- X16 device(K9K2G16X0M) : 1K-Word
- Random Read : 25
μ
s(Max.)
- Serial Access
1.8V device(K9K2GXXQ0M): 80ns(Min.)
3.3V device(K9XXGXXUXM): 50ns(Min.)
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Fast Write Cycle Time
- Program time : 300
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Cache Program Operation for High Performance Program
Power-On Auto-Read Operation
Intelligent Copy-Back Operation
Unique ID for Copyright Protection
Package :
- K9K2GXXX0M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9K2G08U0M-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9K2GXXX0M-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9K2G08U0M-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9K2G08U0M-V,F(WSOPI ) is the same device as
K9K2G08U0M-Y,P(TSOP1) except package type.
- K9W4GXXU1M-YCB0,PCB0/YIB0,PIB0 : Two K9K2G08U0M
stacked.
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9W4GXXU1M-KCB0,ECB0/KIB0,EIB0 : Two K9K2G08U0M
stacked.
48 - Pin TSOP I (12 x 17 / 0.5 mm pitch)
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9K2G08Q0M-Y,P
1.7 ~ 1.95V
X8
TSOP1
K9K2G16Q0M-Y,P
X16
K9XXG08UXM-Y,P,K,E
2.7 ~ 3.6V
X8
K9XXG16UXM-Y,P,K,E
X16
K9K2G08U0M-V,F
X8
WSOP1
相關(guān)PDF資料
PDF描述
K9XXG08UXM-E SSR H/S ZS 600V 50A 4-32VDC
K9XXG08UXM-K 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG08UXM-P SSR H/S ZS 600V 70A 4-32VDC
K9XXG08UXM-Y 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG16UXM-E SSR H/S IO 230V 20A 4-32VDC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K2G08U0M-F 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-FCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-FIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-PCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-PCB000 制造商:Samsung Semiconductor 功能描述:
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