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參數(shù)資料
| 型號： | K9K2G08U0A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | TV 8C 8#16 PIN WALL RECP |
| 中文描述： | 256M × 8位NAND閃存 |
| 文件頁數(shù)： | 2/34頁 |
| 文件大?。?/td> | 850K |
| 代理商： | K9K2G08U0A |
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FLASH MEMORY
2
K9K2G08U0A
Preliminary
GENERAL DESCRIPTION
Offered in 256Mx8bit the K9K2G08U0A is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost-effective solution
for the solid state mass storage market. A program operation can be performed in typical 200
μ
s on the 2112byte page and an erase
operation can be performed in typical 2ms on a 128K-byte block. Data in the data page can be read out at 30ns cycle time per byte.
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all
program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the
write-intensive systems can take advantage of the K9K2G08U0A
′
s extended reliability of 100K program/erase cycles by providing
ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K2G08U0A is an optimum solution for large nonvolatile
storage applications such as solid state file storage and other portable applications requiring non-volatility.
FEATURES
Voltage Supply
- 2.7 V ~3.6 V
Organization
- Memory Cell Array
- (256M + 8,192K)bit x 8bit
- Data Register
- (2K + 64)bit x8bit
- Cache Register
- (2K + 64)bit x8bit
Automatic Program and Erase
- Page Program
- (2K + 64)Byte
- Block Erase
- (128K + 4K)Byte
Page Read Operation
- Page Size
- 2K-Byte
- Random Read : 25
μ
s(Max.)
- Serial Access : 30ns(Min.)
256M x 8 Bit NAND Flash Memory
Fast Write Cycle Time
- Program time : 200
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Cache Program Operation for High Performance Program
Intelligent Copy-Back Operation
Unique ID for Copyright Protection
Package :
- K9K2G08U0A-VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9K2G08U0A-FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9K2G08U0A-V,F
2.7 ~ 3.6V
X8
WSOP1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K2G08U0M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXG08UXM-E | SSR H/S ZS 600V 50A 4-32VDC |
| K9XXG08UXM-K | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXG08UXM-P | SSR H/S ZS 600V 70A 4-32VDC |
| K9XXG08UXM-Y | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K2G08U0A-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9K2G08U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-FCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-FIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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