- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374299 > K9K1G08U0M-YIB0 (SAMSUNG SEMICONDUCTOR CO. LTD.) 128M x 8 Bit NAND Flash Memory PDF資料下載
參數(shù)資料
| 型號： | K9K1G08U0M-YIB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128M x 8 Bit NAND Flash Memory |
| 中文描述： | 128M的× 8位NAND閃存 |
| 文件頁數(shù)： | 1/37頁 |
| 文件大小： | 467K |
| 代理商： | K9K1G08U0M-YIB0 |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁
K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
FLASH MEMORY
1
Document Title
128M x 8 Bit NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
Revision No
0.0
0.1
0.2
0.3
Remark
History
1. Initial issue
1.[Page 31] device code (76h) --> device code (79h)
1.Powerup sequence is added
: Recovery time of minimum 1
μ
s is required before internal circuit gets
ready for any command sequences
2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added.
3. [Page28] Only address A
14
to A
25
is valid while A
9
to A
13
is ignored
--> Only address A
14
to A
26
is valid while A
9
to A
13
is ignored
(page 30)
A14 and A15 must be the same between source and target page
--> A14 , A15 and A26 must be the same between source and target page
V
CC
WP
High
≈
≈
2.5V
2.5V
WE
≈
1
μ
Draft Date
Apr. 7th 2001
Jul. 3rd 2001
Jul. 23th 2001
Sep. 13th 2001
Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
相關PDF資料 |
PDF描述 |
|---|---|
| K9K2G08U0A | TV 8C 8#16 PIN WALL RECP |
| K9K2G08U0M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXG08UXM-E | SSR H/S ZS 600V 50A 4-32VDC |
| K9XXG08UXM-K | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXG08UXM-P | SSR H/S ZS 600V 70A 4-32VDC |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9K1G16Q0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G16U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-PCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復。