參數(shù)資料
型號(hào)： K9K1208U0A-YCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： TV 16C 16#16 SKT RECP
中文描述： 6400 × 8位NAND閃存
文件頁數(shù)： 8/27頁
文件大?。?/td> 357K
代理商： K9K1208U0A-YCB0
K9K1208U0A-YCB0, K9K1208U0A-YIB0
FLASH MEMORY
8
AC Characteristics for Operation
NOTE
:
1. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Parameter
Symbol
Min
Max
Unit
Data Transfer from Cell to Register
t
R
-
10
μ
s
ALE to RE Delay( ID read )
t
AR1
100
-
ns
ALE to RE Delay(Read cycle)
t
AR2
50
-
ns
CE to RE Delay( ID read)
t
CR
100
-
ns
Ready to RE Low
t
RR
20
-
ns
RE Pulse Width
t
RP
30
-
ns
WE High to Busy
t
WB
-
100
ns
Read Cycle Time
t
RC
60
-
ns
RE Access Time
t
REA
-
35
ns
RE High to Output Hi-Z
t
RHZ
15
30
ns
CE High to Output Hi-Z
t
CHZ
-
20
ns
RE High Hold Time
t
REH
25
-
ns
Output Hi-Z to RE Low
t
IR
0
-
ns
Last RE High to Busy(at sequential read)
t
RB
-
100
ns
CE High to Ready(in case of interception by CE at read)
t
CRY
-
50 +tr(R/B)
(1)
ns
CE High Hold Time(at the last serial read)
(2)
t
CEH
100
-
ns
RE Low to Status Output
t
RSTO
-
35
ns
CE Low to Status Output
t
CSTO
-
45
ns
WE High to RE Low
t
WHR
60
-
ns
RE access time(Read ID)
t
READID
-
35
ns
Device Resetting Time(Read/Program/Erase)
t
RST
-
5/10/500
(3)
μ
s
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
Min
Max
Unit
CLE setup Time
t
CLS
0
-
ns
CLE Hold Time
t
CLH
10
-
ns
CE setup Time
t
CS
0
-
ns
CE Hold Time
t
CH
10
-
ns
WE Pulse Width
t
WP
25
(1)
-
ns
ALE setup Time
t
ALS
0
-
ns
ALE Hold Time
t
ALH
10
-
ns
Data setup Time
t
DS
20
-
ns
Data Hold Time
t
DH
15
-
ns
Write Cycle Time
t
WC
60
-
ns
WE High Hold Time
t
WH
25
-
ns
NOTE
: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
相關(guān)PDF資料
PDF描述
K9K1208U0A-YIB0 64M x 8 Bit NAND Flash Memory
K9K1208U0M 64M x 8 Bit NAND Flash Memory
K9K1208U0M-YCB0 64M x 8 Bit NAND Flash Memory
K9K1208U0M-YIB0 64M x 8 Bit NAND Flash Memory
K9K1G08U0M-YCB0 128M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K1208U0A-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1208U0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1208U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1208U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1208U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
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