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參數(shù)資料
| 型號： | K9F5616Q0B-DCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | SCSI-5 MALE SCSI-3 MALE CABLE 10 FT |
| 中文描述： | 32M的× 8位，16米x 16位NAND閃存 |
| 文件頁數(shù)： | 19/34頁 |
| 文件大?。?/td> | 604K |
| 代理商： | K9F5616Q0B-DCB0 |
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FLASH MEMORY
19
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
System Interface Using CE don’t-care.
CE
WE
t
WP
t
CH
t
CS
Start Add.(3Cycle)
80h
Data Input
CE
CLE
ALE
WE
Data Input
CE don’t-care
≈
≈
10h
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte/264word page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addi-
tion, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading
and reading would provide significant savings in power consumption.
Start Add.(3Cycle)
00h
CE
CLE
ALE
WE
Data Output(sequential)
CE don’t-care
≈
R/B
t
R
RE
t
CEA
out
t
REA
CE
RE
I/O
0
~
15
Figure 6. Program Operation with CE don’t-care.
Figure 7. Read Operation with CE don’t-care.
On K9F5608U0B_Y,P or K9F5608U0B_V,F
CE must be held
low during tR
I/Ox
I/Ox
相關PDF資料 |
PDF描述 |
|---|---|
| K9F5616Q0B-DIB0 | MICRO D68 M/CENT50 M 2FT |
| K9F5616Q0B-HCB0 | MICRO D68 M/CENT50 M 3FT |
| K9F5616Q0B-HIB0 | Connector assemblies, SCSI Computer cables; |
| K9F5616U0B-DCB0 | M1 - VGA W/USB 3 FEET |
| K9F5616U0B-DIB0 | M1 - VGA W/USB 6 FEET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9F5616Q0B-DIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0B-HCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0B-HIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0C-D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory |
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