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參數(shù)資料
| 型號(hào)： | K9F5608U0C-YCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mb/256Mb 1.8V NAND Flash Errata |
| 中文描述： | 512Mb/256Mb 1.8 NAND閃存勘誤表 |
| 文件頁(yè)數(shù)： | 39/39頁(yè) |
| 文件大小： | 655K |
| 代理商： | K9F5608U0C-YCB0 |
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K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
38
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device) or 2V(3.3V device). WP pin provides hardware protection and
is recommended to be kept at V
IL
during power-up and power-down and recovery time of minimum 10
μ
s is required before internal
circuit gets ready for any command sequences as shown in Figure 18. The two step command sequence for program/erase provides
additional software protection.
Figure 18. AC Waveforms for Power Transition
V
CC
WP
High
≈
≈
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
WE
Data Protection & Power up sequence
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
10
μ
s
≈
≈
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F5608U0C-YIB0 | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616Q0C-DCB0 | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616Q0C-DIB0 | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616Q0C-HCB0 | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616Q0C-HIB0 | 512Mb/256Mb 1.8V NAND Flash Errata |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F5608U0C-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608U0C-YIB000 | 制造商:Samsung Semiconductor 功能描述: |
| K9F5608U0D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory |
| K9F5608U0D-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory |
| K9F5608U0D-FCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory |
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