- 您現在的位置：買賣IC網 > PDF目錄374298 > K9F5608U0C-VIB0 (SAMSUNG SEMICONDUCTOR CO. LTD.) TV 3C 3#20 PIN WALL RECP PDF資料下載
參數資料
| 型號： | K9F5608U0C-VIB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | TV 3C 3#20 PIN WALL RECP |
| 中文描述： | 512Mb/256Mb 1.8 NAND閃存勘誤表 |
| 文件頁數： | 18/39頁 |
| 文件大小： | 655K |
| 代理商： | K9F5608U0C-VIB0 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁當前第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
17
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
Samsung NAND Flash has two address pointer commands as a substitute for the most significant column address. ’00h’ command
sets the pointer to ’A’ area(0~255word), and ’50h’ command sets the pointer to ’B’ area(256~263word). With these commands, the
starting column address can be set to any of a whole page(0~263word). ’00h’ or ’50h’ is sustained until another address pointer com-
mand is inputted. To program data starting from ’A’ or ’B’ area, ’00h’ or ’50h’ command must be inputted before ’80h’ command is
written. A complete read operation prior to ’80h’ command is not necessary.
00h
(1) Command input sequence for programming ’A’ area
Address / Data input
80h
10h
00h
80h
10h
Address / Data input
The address pointer is set to ’A’ area(0~255), and sustained
50h
(2) Command input sequence for programming ’B’ area
Address / Data input
80h
10h
50h
80h
10h
Address / Data input
Only ’B’ area can be programmed.
’50h’ command can be omitted.
The address pointer is set to ’B’ area(256~263), and sustained
’00h’ command can be omitted.
It depends on how many data are inputted.
’A’,’B’ area can be programmed.
Pointer Operation of K9F5616X0C(X16)
Command
Pointer position
Area
00h
50h
0 ~ 255 word
256 ~ 263 word
main array(A)
spare array(B)
"A" area
(00h plane)
256 Word
"B" area
(50h plane)
8 Word
"A"
"B"
Internal
Page Register
Pointer select
command
(00h, 50h)
Pointer
Figure 5. Block Diagram of Pointer Operation
相關PDF資料 |
PDF描述 |
|---|---|
| K9F5608U0C-YCB0 | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608U0C-YIB0 | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616Q0C-DCB0 | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616Q0C-DIB0 | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616Q0C-HCB0 | 512Mb/256Mb 1.8V NAND Flash Errata |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K9F5608U0C-Y | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory |
| K9F5608U0C-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608U0C-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608U0C-YIB000 | 制造商:Samsung Semiconductor 功能描述: |
| K9F5608U0D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復。