參數(shù)資料
型號(hào)： K9F5608D0C
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： TV 37C 37#16 PIN RECP
中文描述： 32M的× 8位，16米x 16位NAND閃存
文件頁(yè)數(shù)： 21/42頁(yè)
文件大小： 684K
代理商： K9F5608D0C
FLASH MEMORY
21
K9F5608D0C
K9F5608U0C
K9F5608Q0C
K9F5616D0C
K9F5616U0C
K9F5616Q0C
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte(x8 device), 264word(x16 device) page registers are utilized as seperate buffers for this operation and the system design gets
more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during
the data-loading and reading would provide significant savings in power consumption.
CE
WE
t
WP
t
CH
t
CS
Start Add.(3Cycle)
80h
Data Input
CE
CLE
ALE
WE
Data Input
CE don’t-care
≈
10h
Start Add.(3Cycle)
00h
CE
CLE
ALE
WE
Data Output(sequential)
CE don’t-care
R/B
t
R
RE
t
CEA
out
t
REA
CE
RE
I/O
0
~
15
Figure 6. Program Operation with CE don’t-care.
Figure 7. Read Operation with CE don’t-care.
On K9F5608U0C_Y,P,V,F or K9F5608D0C_Y,P
CE must be held
low during tR
I/Ox
I/Ox
t
OH
≈
≈
相關(guān)PDF資料
PDF描述
K9F5616D0C 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616D0C-D 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616D0C-H 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616D0C-P 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616D0C-Y 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5608D0C-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608D0C-H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608D0C-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608D0C-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608D0D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
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