參數(shù)資料
型號： K9F3208W0A-
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:128; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle
中文描述： 4米× 8位NAND閃存
文件頁數(shù)： 2/27頁
文件大?。?/td> 558K
代理商： K9F3208W0A-
K9F3208W0A-TCB0, K9F3208W0A-TIB0
FLASH MEMORY
2
4M x 8 Bit NAND Flash Memory
The K9F3208W0A is a 4M(4,194,304)x8bit NAND Flash Mem-
ory with a spare 128K(131,072)x8bit. Its NAND cell provides
the most cost-effective solution for the solid state mass storage
market. A program operation programs the 528-byte page in
typical 250
μ
s and an erase operation can be performed in typi-
cal 2ms on an 8K-byte block.
Data in the page can be read out at 50ns cycle time per byte.
The I/O pins serve as the ports for address and data input/out-
put as well as command inputs. The on-chip write controller
automates all program and erase system functions, including
pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take
advantage of the K9F3208W0A extended reliability of
1,000,000 program/erase cycles by providing ECC(Error Cor-
rection Code) with real time mapping-out algorithm. The
K9F3208W0A is an optimum solution for large nonvolatile stor-
age application such as solid state storage, digital voice
recorder, digital still camera and other portable applications
requiring nonvolatility.
GENERAL DESCRIPTION
FEATURES
Voltage Supply : 2.7V ~ 5.5V
Organization
- Memory Cell Array : (4M + 128K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (8K + 256)Byte
- Status Register
528-Byte Page Read Operation
- Random Access : 10
μ
s(Max.)
- Serial Page Access : 50ns(Min.)
Fast Write Cycle Time
- Program Time : 250
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 1Million Program/Erase Cycles
- Data Retention : 10 years
Command Register Operation
44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
- Forward Type
PIN CONFIGURATION
NOTE
: Connect all V
CC,
V
CC
Q and V
SS
pins of each device to power supply outputs.
Do not leave V
CC
or V
SS
disconnected.
V
SS
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
I/O0
I/O1
I/O2
I/O3
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
V
CC
Q
I/O4
I/O5
I/O6
I/O7
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
GND
R/B
RE
CE
V
CC
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
44(40) TSOP (II)
STANDARD TYPE
Pin Name
Pin Function
I/O0 ~ I/O7
Data Inputs/Outputs
CLE
Command Latch Enable
ALE
Address Latch Enable
CE
Chip Enable
RE
Read Enable
WE
Write Enable
WP
Write Protect
SE
Spare area Enable
R/B
Ready/Busy output
GND
Ground Input
V
CC
Power(2.7V ~ 5.5V)
V
CC
Q
Output Butter Power(2.7V ~ 5.5V)
V
SS
Ground
N.C
No Connection
PIN DESCRIPTION
相關(guān)PDF資料
PDF描述
K9F3208W0A-TCB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F3208W0A-TIB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F4008W0A 512K x 8 bit NAND Flash Memory
K9F4008W0A- 512K x 8 bit NAND Flash Memory
K9F4008W0A-TCB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F3208W0A-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 8 Bit NAND Flash Memory
K9F3208W0A-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 8 Bit NAND Flash Memory
K9F4008W0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory
K9F4008W0A- 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory
K9F4008W0A-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory
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