參數(shù)資料
型號: K9F2G08U0M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Connector; Leaded Process Compatible:Yes RoHS Compliant: Yes
中文描述: 閃存
文件頁數(shù): 1/38頁
文件大?。?/td> 601K
代理商: K9F2G08U0M
FLASH MEMORY
1
Preliminary
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Document Title
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
Revision No
0.0
0.1
0.2
0.3
0.4
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
History
1. Initial issue
1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 35)
The min. Vcc value 1.8V devices is changed.
K9F2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Few current value is changed.
Before Unit : us
After
1. The 3rd Byte ID after 90h ID read command is don’t cared.
The 5th Byte ID after 90h ID read command is deleted.
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
3. Pb-free Package is added.
K9F2G08Q0M-PCB0,PIB0
K9F2G08U0M-PCB0,PIB0
K9F2G16U0M-PCB0,PIB0
K9F2G16Q0M-PCB0,PIB0
K9F2GXXQ0M
K9F2GXXU0M
Typ.
Max.
Typ.
Max.
I
SB
2
20
100
20
100
I
LI
-
±
20
±
20
-
±
20
±
20
I
LO
-
-
K9F2GXXQ0M
K9F2GXXU0M
Typ.
Max.
Typ.
Max.
I
SB
2
10
50
10
50
I
LI
-
±
10
±
10
-
±
10
±
10
I
LO
-
-
Draft Date
Sep. 19.2001
Nov. 22. 2002
Mar. 6.2003
Apr. 2. 2003
Apr. 9. 2003
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2G08U0M-PCB000 制造商:Samsung Semiconductor 功能描述:
K9F2G08U0M-PCB0T00 制造商:Samsung Semiconductor 功能描述:
K9F2G08U0M-PIB0000 制造商:Samsung 功能描述:2GB SLC NORMAL X8 TSOP1 - Trays
K9F2G08U0M-YCB0 制造商:Samsung Electro-Mechanics 功能描述:NAND Flash, 256M x 8, 48 Pin, Plastic, TSSOP
K9F2G08UOC-SCBOT00 制造商:Samsung SDI 功能描述: