參數(shù)資料
型號(hào)： K9F2816U0C-YIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
中文描述： 1,600 × 8位，8米× 16位NAND閃存
文件頁(yè)數(shù)： 12/33頁(yè)
文件大小： 583K
代理商： K9F2816U0C-YIB0
K9F2816U0C-DCB0,DIB0
FLASH MEMORY
12
K9F2808U0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2816U0C-YCB0,YIB0
K9F2808U0C-VCB0,VIB0
AC Timing Characteristics for Command / Address / Data Input
NOTE
:
1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
Parameter
Symbol
K9F2808Q0C
K9F2808U0C
Unit
Min
Max
Min
Max
CLE Set-up Time
t
CLS
0
-
0
-
ns
CLE Hold Time
t
CLH
10
-
10
-
ns
CE Setup Time
t
CS
0
-
0
-
ns
CE Hold Time
t
CH
10
-
10
-
ns
WE Pulse Width
t
WP
40
-
25
-
ns
ALE Setup Time
t
ALS
0
-
0
-
ns
ALE Hold Time
t
ALH
10
-
10
-
ns
Data Setup Time
t
DS
20
-
20
-
ns
Data Hold Time
t
DH
10
-
10
-
ns
Write Cycle Time
t
WC
60
-
45
-
ns
WE High Hold Time
t
WH
20
-
15
-
ns
AC Characteristics for Operation
NOTE
:
1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
Parameter
Symbol
K9F2808Q0C
K9F2808U0C
Unit
Min
Max
Min
Max
Data Transfer from Cell to Register
t
R
-
10
-
10
μ
s
ALE to RE Delay
t
AR
10
-
10
-
ns
CLE to RE Delay
t
CLR
10
-
10
-
ns
Ready to RE Low
t
RR
20
-
20
-
ns
RE Pulse Width
t
RP
40
-
25
-
ns
WE High to Busy
t
WB
-
100
-
100
ns
Read Cycle Time
t
RC
60
-
50
-
ns
CE Access Time
t
CEA
-
55
-
45
ns
RE Access Time
t
REA
-
40
-
30
ns
RE High to Output Hi-Z
t
RHZ
-
30
-
30
ns
CE High to Output Hi-Z
t
CHZ
-
20
-
20
ns
RE or CE High to Output hold
t
OH
15
-
15
-
ns
RE High Hold Time
t
REH
20
-
15
-
ns
Output Hi-Z to RE Low
t
IR
0
-
0
-
ns
WE High to RE Low
t
WHR
60
-
60
-
ns
Device Resetting Time
(Read/Program/Erase)
t
RST
-
5/10/500
(1)
-
5/10/500
(1)
μ
s
K9F2808U0C-
Y,P,V,F only
Last RE High to Busy
(at sequential read)
t
RB
-
100
-
100
ns
CE High to Ready(in case of inter-
ception by CE at read)
t
CRY
-
50 +tr(R/B)
(3)
-
50 +tr(R/B)
(3)
ns
CE High Hold Time(at the last
serial read)
(2)
t
CEH
100
-
100
-
ns
相關(guān)PDF資料
PDF描述
K9F2816U0C-HIB0 16M x 8 Bit NAND Flash Memory
K9F2816U0C-PCB0 16M x 8 Bit NAND Flash Memory
K9F2808Q0C-DCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2816Q0C-DCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2816Q0C-DIB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2G08Q0M 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY
K9F2G08R0A 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY
K9F2G08R0A-J 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY
K9F2G08U0A 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY
K9F2G08U0A-I 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY
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