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參數(shù)資料
| 型號(hào)： | K9F2816U0C-PCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 8 Bit NAND Flash Memory |
| 中文描述： | 1,600 × 8位NAND閃存 |
| 文件頁數(shù)： | 33/33頁 |
| 文件大?。?/td> | 583K |
| 代理商： | K9F2816U0C-PCB0 |
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K9F2816U0C-DCB0,DIB0
FLASH MEMORY
33
K9F2808U0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2816U0C-YCB0,YIB0
K9F2808U0C-VCB0,VIB0
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device) or 2V(3.3V device). WP pin provides hardware protection and
is recommended to be kept at V
IL
during power-up and power-down and recovery time of minimum 10
μ
s is required before internal
circuit gets ready for any command sequences as shown in Figure 15. The two step command sequence for program/erase provides
additional software protection.
Figure 15. AC Waveforms for Power Transition
V
CC
WP
High
≈
≈
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
WE
Data Protection & Power up sequence
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
10
μ
s
≈
≈
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F2808Q0C-DCB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2816Q0C-DCB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2816Q0C-DIB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2816U0C-DIB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2816U0C-YCB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F2816U0C-PIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2816U0C-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2816U0C-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2G08Q0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F2G08R0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
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