參數(shù)資料
型號(hào)： K9F2816U0C-HCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 8 Bit NAND Flash Memory
中文描述： 1,600 × 8位NAND閃存
文件頁數(shù)： 13/33頁
文件大小： 583K
代理商： K9F2816U0C-HCB0
K9F2816U0C-DCB0,DIB0
FLASH MEMORY
13
K9F2808U0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2816U0C-YCB0,YIB0
K9F2808U0C-VCB0,VIB0
NAND Flash Technical Notes
Invalid Block(s)
Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. The infor-
mation regarding the invalid block(s) is so called as the invalid block information. Devices with invalid block(s) have the same quality
level as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the perfor-
mance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design
must be able to mask out the invalid block(s) via address mapping. The 1st block, which is placed on 00h block address, is fully guar-
anteed to be a valid block, does not require Error Correction.
Identifying Invalid Block(s)
All device locations are erased(FFh) except locations where the invalid block(s) information is written prior to shipping. The invalid
block(s) status is defined by the 6th byte(X8 device) or 1st & 6th word(X16 device) in the spare area. Samsung makes sure that
either the 1st or 2nd page of every invalid block has non-FFh(X8 device) or non-FFFFh(X16 device) data at the column address of
517(X8 device) or 256 and 261(X16 device). Since the invalid block information is also erasable in most cases, it is impossible to
recover the information once it has been erased. Therefore, the system must be able to recognize the invalid block(s) based on the
original invalid block information and create the invalid block table via the following suggested flow chart(Figure 3). Any intentional
erasure of the original invalid block information is prohibited.
*
Check "FFh" at the column address
of the 1st and 2nd page in the block
Figure 3. Flow chart to create invalid block table.
Start
Set Block Address = 0
Check "FFh"
Increment Block Address
Last Block
End
No
Yes
Yes
Create (or update)
Invalid Block(s) Table
No
517(X8 device) or 256 and 261(X16 device)
相關(guān)PDF資料
PDF描述
K9F3208W0A- Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:128; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle
K9F3208W0A-TCB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F3208W0A-TIB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F4008W0A 512K x 8 bit NAND Flash Memory
K9F4008W0A- 512K x 8 bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2816U0C-HIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2816U0C-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2816U0C-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2816U0C-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2816U0C-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*