參數(shù)資料
型號(hào)： K9F2816Q0C-DIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
中文描述： 1,600 × 8位，8米× 16位NAND閃存
文件頁(yè)數(shù)： 29/33頁(yè)
文件大?。?/td> 583K
代理商： K9F2816Q0C-DIB0
K9F2816U0C-DCB0,DIB0
FLASH MEMORY
29
K9F2808U0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2816U0C-YCB0,YIB0
K9F2808U0C-VCB0,VIB0
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte/word or consecutive
bytes/words up to 528
(X8 device) or
264
(X16 device)
, in a single page program cycle. The number of consecutive partial page program-
ming operation within the same page without an intervening erase operation should not exceed 2 for main array and 3 for spare
array. The addressing may be done in any random order in a block. A page program cycle consists of a serial data loading period in
which up to 528 bytes
(X8 device)
or 264 words
(X16 device)
of data may be loaded into the page register, followed by a non-volatile pro-
gramming period where the loaded data is programmed into the appropriate cell. About the pointer operation, please refer to the
attached technical notes.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the three cycle address input and
then serial data loading. The words other than those to be programmed do not need to be loaded.The Page Program confirm com-
mand(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the pro-
gramming process. The internal write controller automatically executes the algorithms and timings necessary for program and verify,
thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command may be
entered, with RE and CE low, to read the status register. The system controller can detect the completion of a program cycle by
monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are
valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 10).
The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in
Read Status command mode until another valid command is written to the command register.
Figure 10. Program Operation
80h
R/B
Address & Data Input
I/O
0
Pass
10h
70h
Fail
t
PROG
I/Ox
相關(guān)PDF資料
PDF描述
K9F2816U0C-DIB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2816U0C-YCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808Q0C Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:46; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F2816Q0C-HCB0 DB50 MALE/ DB50 MALE 2FT
K9F2816Q0C-HIB0 INTERNAL SNGL-DRV LOOP CABLE C
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2816Q0C-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2816Q0C-HIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2816U0C-DCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2816U0C-DIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2816U0C-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
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