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參數資料
| 型號： | K9F2808U0M-YCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 8 Bit NAND Flash Memory |
| 中文描述： | 1,600 × 8位NAND閃存 |
| 文件頁數： | 29/29頁 |
| 文件大?。?/td> | 304K |
| 代理商： | K9F2808U0M-YCB0 |
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FLASH MEMORY
29
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V/2V(K9F2808Q0B:1.1V, K9F2808U0B:2V). WP pin provides hardware pro-
tection and is recommended to be kept at V
IL
during power-up and power-down and recovery time of minimum 1
μ
s is required
before internal circuit gets ready for any command sequences as shown in Figure 14. The two step command sequence for program/
erase provides additional software protection.
Figure 14. AC Waveforms for Power Transition
V
CC
WP
High
≈
≈
K9F2808Q0B : ~ 1.5V
K9F2808U0B : ~ 2.5V
WE
Data Protection & Powerup sequence
K9F2808Q0B : ~ 1.5V
K9F2808U0B : ~ 2.5V
10
μ
s
≈
≈
相關PDF資料 |
PDF描述 |
|---|---|
| K9F2808U0B-YCB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-DIB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2808U0B-D | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-V | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-VCB0 | 16M x 8 Bit NAND Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K9F2808U0M-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2816Q0C-DCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2816Q0C-DIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2816Q0C-HCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2816Q0C-HIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
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