- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374297 > K9F2808U0C-HIB0 (SAMSUNG SEMICONDUCTOR CO. LTD.) 16M x 8 Bit NAND Flash Memory PDF資料下載
參數(shù)資料
| 型號： | K9F2808U0C-HIB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 8 Bit NAND Flash Memory |
| 中文描述： | 1,600 × 8位NAND閃存 |
| 文件頁數(shù)： | 28/31頁 |
| 文件大小： | 774K |
| 代理商： | K9F2808U0C-HIB0 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁當前第28頁第29頁第30頁第31頁
FLASH MEMORY
28
K9F2808U0C
Figure 11. Block Erase Operation
BLOCK ERASE
The Erase operation is done on a block basis. Block address loading is accomplished in two cycles initiated by an Erase Setup com-
mand(60h). Only address A
14
to
A
23
is valid while A
9
to A
13
is ignored. The Erase Confirm command(D0h) following the block address
loading initiates the internal erasing process. This two-step sequence of setup followed by execution command ensures that memory
contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When the
erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 11 details the sequence.
60h
Block Add. : A
9
~ A
23
R/B
Address Input(2Cycle)
I/O
0
Pass
D0h
70h
Fail
t
BERS
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 4 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, a read command(00h or 50h) should be given before sequential page read cycle.
Table4. Read Status Register Definition
I/O #
Status
Definition
I/O 0
Program / Erase
"0" : Successful Program / Erase
"1" : Error in Program / Erase
I/O 1
Reserved for Future
Use
"0"
I/O 2
"0"
I/O 3
"0"
I/O 4
"0"
I/O 5
"0"
I/O 6
Device Operation
"0" : Busy "1" : Ready
I/O 7
Write Protect
"0" : Protected "1" : Not Protected
I/Ox
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F2808U0C-XCB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-P | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-PCB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-V | 16M x 8 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F2808U0C-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-PCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-PCB0T00 | 制造商:Samsung Semiconductor 功能描述:FLASH PARALLEL 3.3V 128MBIT 16MX8 10US 48TSOP-I - Tape and Reel |
| K9F2808U0C-PIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-V | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。