參數(shù)資料
型號(hào)： K9F2808U0C-DIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
中文描述： 1,600 × 8位，8米× 16位NAND閃存
文件頁(yè)數(shù)： 7/29頁(yè)
文件大?。?/td> 304K
代理商： K9F2808U0C-DIB0
FLASH MEMORY
7
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
PIN DESCRIPTION
NOTE
: Connect all V
CC
and V
SS
pins of each device to common power supply outputs.
Pin Name
Pin Function
I/O
0
~ I/O
7
DATA INPUTS/OUTPUTS
The I/O pins are used to input command, address and data, and to output data during read operations. The
I/O pins float to high-z when the chip is deselected or when the outputs are disabled.
CLE
COMMAND LATCH ENABLE
The CLE input controls the activating path for commands sent to the command register. When active high,
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
ALE
ADDRESS LATCH ENABLE
The ALE input controls the activating path for address to the internal address registers. Addresses are
latched on the rising edge of WE with ALE high.
CE
CHIP ENABLE
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and
the device does not return to standby mode in program or erase opertion. Regarding CE control during read
operation, refer to ’ Page read’ section of Device operation.
RE
READ ENABLE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid
tREA after the falling edge of RE which also increments the internal column address counter by one.
WE
WRITE ENABLE
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of
the WE pulse.
WP
WRITE PROTECT
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage
generator is reset when the WP pin is active low.
R/B
READY/BUSY OUTPUT
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or
random read operation is in process and returns to high state upon completion. It is an open drain output and
does not float to high-z condition when the chip is deselected or when outputs are disabled.
VccQ
OUTPUT BUFFER POWER
V
CC
Q is the power supply for Output Buffer.
VccQ is internally connected to Vcc, thus should be biased to Vcc.
Vcc
POWER
V
CC
is the power supply for device.
Vss
GROUND
N.C
NO CONNECTION
Lead is not internally connected.
GND
GND INPUT FOR ENABLING SPARE AREA
To do sequential read mode including spare area , connect this input pin to Vss or set to static low state
or to do sequential read mode excluding spare area , connect this input pin to Vcc or set to static high state.
DNU
DO NOT USE
Leave it disconnected.
相關(guān)PDF資料
PDF描述
K9F2808U0B-D 16M x 8 Bit NAND Flash Memory
K9F2808U0B-V 16M x 8 Bit NAND Flash Memory
K9F2808U0B-VCB0 16M x 8 Bit NAND Flash Memory
K9F2808U0B-Y 16M x 8 Bit NAND Flash Memory
K9F2808U0C-VCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2808U0C-F 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-FCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-FIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-HCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-HIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*