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參數資料
| 型號： | K9F2808U0B-DCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 8 Bit NAND Flash Memory |
| 中文描述： | 1,600 × 8位NAND閃存 |
| 文件頁數： | 17/29頁 |
| 文件大小： | 304K |
| 代理商： | K9F2808U0B-DCB0 |
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FLASH MEMORY
17
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during data-loading or sequential data-reading as shown below. The internal
528byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant saving in power consumption.
CE
WE
t
WP
t
CH
t
CS
Start Add.(3Cycle)
80h
Data Input
CE
CLE
ALE
WE
I/O
0
~
7
Data Input
CE don’ t-care
≈
≈
10h
Start Add.(3Cycle)
00h
CE
CLE
ALE
WE
I/O
0
~
7
Data Output(sequential)
CE don’ t-care
≈
R/B
t
R
RE
t
CEA
out
t
REA
CE
RE
I/O
0
~
7
Figure 5. Program Operation with CE don’ t-care.
Figure 6. Read Operation with CE don’t-care.
On K9F2808U0B_Y or K9F2808U0B_V
CE must be held
low during tR
相關PDF資料 |
PDF描述 |
|---|---|
| K9F2808U0B-DIB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0M-YIB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0M-YCB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-YCB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-DIB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K9F2808U0B-DIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-V | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-VCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-VIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-Y | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
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