參數(shù)資料
型號(hào)： K9F1G08Q0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
中文描述： 128M的× 8位/ 64米× 16位NAND閃存
文件頁數(shù)： 7/40頁
文件大小： 729K
代理商： K9F1G08Q0M
FLASH MEMORY
7
K9F1G08D0M
K9F1G08U0M
K9F1G16Q0M
K9F1G16D0M
K9F1G16U0M
K9F1G08Q0M
2K Bytes
64 Bytes
Figure 1-1. K9F1G08X0M (X8) Functional Block Diagram
Figure 2-1. K9F1G08X0M (X8) Array Organization
NOTE
: Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
1st Cycle
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
2nd Cycle
A
8
A
9
A
10
A
11
*L
*L
*L
*L
3rd Cycle
A
12
A
13
A
14
A
15
A
16
A
17
A
18
A
19
4th Cycle
A
20
A
21
A
22
A
23
A
24
A
25
A
26
A
27
V
CC
V
SS
X-Buffers
Latches
& Decoders
Command
Register
I/O Buffers & Latches
Y-Buffers
Latches
& Decoders
Control Logic
& High Voltage
Generator
Global Buffers
Output
Driver
A
12
- A
27
A
0
- A
11
Command
CE
RE
WE
CLE
WP
I/0 0
I/0 7
V
CC
V
SS
64K Pages
(=1,024 Blocks)
2K Bytes
8 bit
64 Bytes
1 Block = 64 Pages
(128K + 4k) Byte
I/O 0 ~ I/O 7
1 Page = (2K + 64)Bytes
1 Block = (2K + 64)B x 64 Pages
= (128K + 4K) Bytes
1 Device = (2K+64)B x 64Pages x 1024 Blocks
= 1056 Mbits
Row Address
Row Address
Page Register
ALE PRE
1024M + 32M Bit
NAND Flash
ARRAY
(
2048 + 64
)Byte x 65536
Y-Gating
Cache Register
Column Address
Column Address
Data Register & S/A
相關(guān)PDF資料
PDF描述
K91G08Q0M CONTACT
K9F1G16Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F2808U0 16M x 8 Bit NAND Flash Memory
K9F2808U0A 16M x 8 Bit NAND Flash Memory
K9F2808U0A- Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:32; Connector Shell Size:19; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G08Q0M-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08R0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
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