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參數(shù)資料
| 型號： | K9F1G08Q0M-YIB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb Gb 1.8V NAND Flash Errata |
| 中文描述： | 1Gb的NAND閃存千兆1.8V的勘誤表 |
| 文件頁數(shù)： | 38/38頁 |
| 文件大?。?/td> | 713K |
| 代理商： | K9F1G08Q0M-YIB0 |
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FLASH MEMORY
37
SAMSUNG
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device) or 2V(3.3V device). WP pin provides hardware protection and
is recommended to be kept at V
IL
during power-up and power-down. A recovery time of minimum 10
μ
s is required before internal cir-
cuit gets ready for any command sequences as shown in Figure 17. The two step command sequence for program/erase provides
additional software protection.
Figure 17. AC Waveforms for Power Transition
V
CC
WP
High
≈
≈
WE
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
10
μ
s
≈
≈
相關PDF資料 |
PDF描述 |
|---|---|
| K9F1G16Q0M-YCB0 | 1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08U0M-YCB0 | 1Gb Gb 1.8V NAND Flash Errata |
| K9F1G16U0M-YCB0 | 1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08Q0M-PCB0 | 1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08Q0M-PIB0 | DBM25PK |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1G08R0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| K9F1G08R0B-JIB0000 | 制造商:Samsung SDI 功能描述:PN may be NE SE |
| K9F1G08U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| K9F1G08U0B-PCB0000 | 制造商:Samsung SDI 功能描述: 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 TSOP1 - Trays |
| K9F1G08U0B-PCB0T00 | 制造商:Samsung Semiconductor 功能描述:FLASH PARALLEL 3.3V 1GBIT 128MX8 48TSOP-I - Tape and Reel |
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