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參數(shù)資料
| 型號(hào)： | K9F1G08Q0M-PIB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DBM25PK |
| 中文描述： | 1Gb的NAND閃存千兆1.8V的勘誤表 |
| 文件頁(yè)數(shù)： | 35/38頁(yè) |
| 文件大?。?/td> | 713K |
| 代理商： | K9F1G08Q0M-PIB0 |
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FLASH MEMORY
34
SAMSUNG
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
Figure 14. Read ID Operation
CE
CLE
I/O
X
ALE
RE
WE
90h
00h
Address. 1cycle
Maker code
Device code
t
CEA
t
AR
t
REA
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Four read cycles sequentially output the manufacturer code(ECh), and the device code and XXh, 4th cycle ID, respectively. The
command register remains in Read ID mode until further commands are issued to it. Figure 14 shows the operation sequence.
Device
Code*
XXh
4th Cyc.*
ECh
Figure 15. RESET Operation
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 3 for device status after reset operation. The R/B pin
transitions to low for tRST after the Reset command is written. Refer to Figure 15 below.
FFh
I/O
X
R/B
t
RST
t
WHR
t
CLR
Device
Device Code*(2nd Cycle)
4th Cycle*
K9F1G08Q0M
A1h
15h
K9F1G08U0M
F1h
15h
K9F1G16Q0M
B1h
55h
K9F1G16U0M
C1h
55h
After Power-up
After Reset
PRE status
High
Low
Waiting for next command
Operation Mode
First page data access is ready
00h command is latched
Table3. Device Status
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F1G16Q0M-PIB0 | DSUB |
| K9F1G08U0M | 1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08U0M-FCB0 | 1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08U0M-FIB0 | 1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08U0M-PCB0 | 1Gb Gb 1.8V NAND Flash Errata |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1G08Q0M-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08Q0M-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08R0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| K9F1G08R0B-JIB0000 | 制造商:Samsung SDI 功能描述:PN may be NE SE |
| K9F1G08U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
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