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參數(shù)資料
| 型號： | K9F1608W0A-TIB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | TV 37C 37#16 PIN RECP |
| 中文描述： | 200萬× 8位NAND閃存 |
| 文件頁數(shù)： | 5/25頁 |
| 文件大?。?/td> | 443K |
| 代理商： | K9F1608W0A-TIB0 |
K9F1608W0A-TCB0, K9F1608W0A-TIB0
FLASH MEMORY
5
PIN DESCRIPTION
Command Latch Enable(CLE)
The CLE input controls the path activation for commands sent to the command register. When active high, commands are latched
into the command register through the I/O ports on the rising edge of the WE signal.
Address Latch Enable(ALE)
The ALE input controls the path activation for address and input data to the internal address/data register.
Addresses are latched on the rising edge of WE with ALE high, and input data is latched when ALE is low.
Chip Enable(CE)
The CE input is the device selection control. When CE goes high during a read operation the device is returned to standby mode.
However, when the device is in the busy state during program or erase, CE high is ignored, and does not return the device to
standby mode.
Write Enable(WE)
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of the WE pulse.
Read Enable(RE)
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid tREA after the falling edge
of RE which also increments the internal column address counter by one.
I/O Port : I/O 0 ~ I/O 7
The I/O pins are used to input command, address and data, and to outputs data during read operations. The I/O pins float to high-z
when the chip is deselected or the outputs are disabled.
Write Protect (WP)
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage generator is reset when
the WP pin is active low.
Ready/Busy(R/B)
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or random read operation is
in process and return to high state upon completion. It is an open drain output and does not float to high-z condition when the chip is
deselected or outputs are disabled.
Power Line(V
CC
& V
CCQ
)
The V
CCQ
is the power supply for I/O interface logic. It is electrically isolated from main power line(V
CC
=2.7~5.5V) for supporting 5V
tolerant I/O with 5V power supply at V
CCQ
.
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| K9F1G08B0C-PCB0T00 | 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 FBGA - Trays |
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| K9F1G08Q0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F1G08Q0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9F1G08Q0M-PCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
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