- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373087 > K9F1208U0M-YCB0 (SAMSUNG SEMICONDUCTOR CO. LTD.) 64M x 8 Bit NAND Flash Memory PDF資料下載
參數(shù)資料
| 型號： | K9F1208U0M-YCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64M x 8 Bit NAND Flash Memory |
| 中文描述： | 6400 × 8位NAND閃存 |
| 文件頁數(shù)： | 13/41頁 |
| 文件大?。?/td> | 1139K |
| 代理商： | K9F1208U0M-YCB0 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁當前第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁
K9F1208U0M-YCB0, K9F1208U0M-YIB0
FLASH MEMORY
13
AC Characteristics for Operation
NOTE
:
1. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Parameter
Symbol
Min
Max
Unit
Data Transfer from Cell to Register
t
R
-
12
μ
s
ALE to RE Delay( ID read )
t
AR1
10
-
ns
ALE to RE Delay(Read cycle)
t
AR2
50
-
ns
CLE to RE Delay
t
CLR
50
-
ns
Ready to RE Low
t
RR
20
-
ns
RE Pulse Width
t
RP
30
-
ns
WE High to Busy
t
WB
-
100
ns
Read Cycle Time
t
RC
50
-
ns
RE Access Time
t
REA
-
35
ns
RE High to Output Hi-Z
t
RHZ
-
30
ns
CE High to Output Hi-Z
t
CHZ
-
20
ns
RE or CE High to Output hold
t
OH
15
-
ns
RE High Hold Time
t
REH
15
-
ns
Output Hi-Z to RE Low
t
IR
0
-
ns
Last RE High to Busy(at sequential read)
t
RB
-
100
ns
CE High to Ready(in case of interception by CE at read)
t
CRY
-
50 +tr(R/B)
(1)
ns
CE High Hold Time(at the last serial read)
(2)
t
CEH
100
-
ns
CE Access Time
t
CEA
-
45
ns
WE High to RE Low
t
WHR
60
-
ns
Device Resetting Time(Read/Program/Erase)
t
RST
-
5/10/500
(3)
μ
s
AC Timing Characteristics for Command / Address / Data Input
NOTE
: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
Parameter
Symbol
Min
Max
Unit
CLE setup Time
t
CLS
0
-
ns
CLE Hold Time
t
CLH
10
-
ns
CE setup Time
t
CS
0
-
ns
CE Hold Time
t
CH
10
-
ns
WE Pulse Width
t
WP
25
(1)
-
ns
ALE setup Time
t
ALS
0
-
ns
ALE Hold Time
t
ALH
10
-
ns
Data setup Time
t
DS
20
-
ns
Data Hold Time
t
DH
10
-
ns
Write Cycle Time
t
WC
50
-
ns
WE High Hold Time
t
WH
15
-
ns
相關PDF資料 |
PDF描述 |
|---|---|
| K9F1208U0M- | 64M x 8 Bit NAND Flash Memory |
| K9F1216U0A | 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208U0A | 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208U0A-F | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:32; Connector Shell Size:19; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9F1208U0A-P | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:32; Connector Shell Size:19; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1208U0M-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
| K9F1208UOMYCB0 | 制造商:SAMSUNG 功能描述:K9F1208UOM-YCB0 |
| K9F1208UOM-YCB0 | 制造商:SAMSUNG 功能描述:K9F1208UOM-YCB0 |
| K9F1208X0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208X0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bits NAND Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復。