參數(shù)資料
型號: K9F1208R0B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: TV 99C 97#22D 2#8(TWINAX) SKT
中文描述: 6400 × 8位NAND閃存
文件頁數(shù): 1/45頁
文件大?。?/td> 1029K
代理商: K9F1208R0B
FLASH MEMORY
1
K9F1208B0B
K9F1208U0B
K9F1208R0B
Preliminary
Document Title
64M x 8 Bit NAND Flash Memory
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
0.1
Remark
Advance
Preliminary
History
Initial issue.
1. Note 1 ( Program/Erase Characteristics) is added( page 14 )
2. NAND Flash Technical Notes is changed.
-Invalid block -> initial invalid block ( page 16 )
-Error in write or read operation ( page 17 )
-Program Flow Chart ( page 17 )
3. Vcc range is changed
-2.4V~2.9V -> 2.5V~2.9V
-1.7V~1.95V ->1.65V~1.95V
4
. Multi plane operation and Copy-Back Program are not supported with 1.8V
device.
Draft Date
Apr. 24th 2004
Oct. 11th.2004
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
相關PDF資料
PDF描述
K9F1208B0B 64M x 8 Bit NAND Flash Memory
K9F1208U0 64M x 8 Bit NAND Flash Memory
K9F1208U0M-YIB0 64M x 8 Bit NAND Flash Memory
K9F1208U0M-YCB0 64M x 8 Bit NAND Flash Memory
K9F1208U0M- 64M x 8 Bit NAND Flash Memory
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