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參數(shù)資料
| 型號： | K7R161882B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM |
| 中文描述： | 512Kx36 |
| 文件頁數(shù)： | 1/19頁 |
| 文件大?。?/td> | 428K |
| 代理商： | K7R161882B |
512Kx36 & 1Mx18 & 2Mx9 QDR
TM
II b2 SRAM
- 1 -
Rev 3.0
June. 2004
K7R163682B
K7R161882B
K7R160982B
Document Title
512Kx36-bit, 1Mx18-bit, 2Mx9-bit QDR
TM
II b2 SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.0
2.0
3.0
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preiliminary
Preiliminary
Final
Final
Final
History
1. Initial document.
1. Change the Boundary scan exit order.
2. Correct the Overshoot and Undershoot timing diagram.
1. Change the JTAG Block diagram
1. Change the DC characteristics table.
1. Correct the JTAG ID register definition
2. Correct the AC timing parameter (delete the tKHKH Max value)
1. Change the Maximum Clock cycle time.
2. Correct the 165FBGA package ball size.
1. Add the power up/down sequencing comment.
2. Update the DC current parameter (Icc and Isb).
1. Update the Stand-by current(Isb)
1. Change the ISB1.
1. Final spec release
1. Delete the x8 Org.
2. Delete the 250MHz speed bin
1. Add the 250MHz speed bin
Speed Bin
From
To
-25
250
280
-20
230
260
-16
210
240
Draft Date
Oct. 17, 2002
Dec. 16, 2002
Dec. 26, 2002
Jan. 27, 2003
Mar. 20, 2003
April. 4, 2003
June. 20, 2003
June. 23, 2003
Oct. 20. 2003
Oct. 31, 2003
Nov. 28, 2003
June. 18, 2004
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PDF描述 |
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| K7R163682B | 512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM |
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| K7R323684M | 1Mx36 & 2Mx18 QDRTM II b4 SRAM |
| K7R323684M-FC16 | 1Mx36 & 2Mx18 QDRTM II b4 SRAM |
| K7R323684M-FC20 | 1Mx36 & 2Mx18 QDRTM II b4 SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7R161884B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDRTM II b4 SRAM |
| K7R161884B-FC16 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDR II b4 SRAM |
| K7R161884B-FC20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDR II b4 SRAM |
| K7R161884B-FC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDR II b4 SRAM |
| K7R161884B-FC30 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDR II b4 SRAM |
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