參數(shù)資料
型號(hào)： K7Q161852A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Kx36 & 1Mx18 QDRTM b2 SRAM
中文描述： 512Kx36
文件頁(yè)數(shù)： 9/17頁(yè)
文件大小： 505K
代理商： K7Q161852A
512Kx36 & 1Mx18 QDR
TM
b2 SRAM
- 9 -
Rev 1.0
July 2002
K7Q163652A
K7Q161852A
DC ELECTRICAL CHARACTERISTICS
(V
DD
=2.5V
±
0.1V, T
A
=0
°
C to +70
°
C)
Notes:
1. Minimum cycle. I
OUT
=0mA.
2. |I
OH
|=(V
DDQ
/2)/(RQ/5)
±
15% @V
OH
=V
DDQ
/2 for 175
≤
RQ
≤
350
.
3. |I
OL
|=(V
DDQ
/2)/(RQ/5)
±
15% @V
OL
=V
DDQ
/2 for 175
≤
RQ
≤
350
.
4. Minimum Impedance Mode when ZQ pin is connected to V
SS
.
5. Operating current is calculated with 50% read cycles and 50% write cycles.
6. Standby Current is only after all pending read and write burst opeactions are completed.
7. Programmable Impedance Mode.
8. These are DC test criteria. DC design criteria is V
REF
±
50mV. The AC V
IH
/V
IL
levels are defined separately for measuring
timing parameters.
9. V
IL
(Min)DC=
-
0.3V, V
IL
(Min)AC=-1.5V(pulse width
≤
3ns).
10. V
IH
(Max)DC=
V
DDQ
+0.3, V
IH
(Max)AC=
V
DDQ
+0.85V(pulse width
≤
3ns).
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT NOTES
Input Leakage Current
I
IL
V
DD
=Max ; V
IN
=V
SS
to V
DDQ
-2
+2
μ
A
μ
A
Output Leakage Current
I
OL
Output Disabled,
-2
+2
Operating Current (x18) : DDR
I
CC
V
DD
=Max , I
OUT
=0mA
Cycle Time
≥
t
KHKH
Min
-16
-
550
mA
1,5
-13
-
470
-10
-
420
Operating Current (x36) : DDR
I
CC
V
DD
=Max , I
OUT
=0mA
Cycle Time
≥
t
KHKH
Min
-16
-
590
mA
1,5
-13
-
500
-10
-
450
Standby Current(NOP) : DDR
I
SB1
Device deselected, I
OUT
=0mA,
f=Max,
All Inputs
≤
0.2V or
≥
V
DD
-0.2V
-16
-
220
mA
1,6
-13
-
200
-10
-
190
Output High Voltage
V
OH1
V
DDQ
/2
V
DDQ
V
2,7
Output Low Voltage
V
OL1
V
SS
V
DDQ
/2
V
3,7
Output High Voltage
V
OH2
I
OH
=-1.0mA
V
DDQ
-0.2
V
DDQ
V
4
Output Low Voltage
V
OL2
I
OL
=1.0mA
V
SS
0.2
V
4
Input Low Voltage
V
IL
-0.3
V
REF
-0.1
V
8,9
Input High Voltage
V
IH
V
REF
+0.1
V
DDQ
+0.3
V
8,10
ABSOLUTE MAXIMUM RATINGS*
*Note:
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. V
DDQ
must not exceed V
DD
during normal operation.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on V
DD
Supply Relative to V
SS
V
DD
-0.5 to 3.6
V
Voltage on V
DDQ
Supply Relative to V
SS
V
DDQ
-0.5 to V
DD
V
Voltage on Input Pin Relative to V
SS
V
IN
-0.5 to V
DD+
0.3
V
Power Dissipation
P
D
1.8
W
Storage Temperature
T
STG
-65 to 150
°
C
°
C
°
C
Operating Temperature
T
OPR
0 to 70
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
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