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參數(shù)資料
| 型號： | K7P803666B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | DRAM |
| 英文描述： | 256Kx36 AND 512Kx18 Synchronous Pipelined SRAM |
| 中文描述： | 256Kx36和512Kx18同步流水線的SRAM |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 216K |
| 代理商： | K7P803666B |
Rev 3.0
K7P801866B
256Kx36 & 512Kx18 SRAM
K7P803666B
March. 2002
- 1 -
Document Title
256Kx36 & 512Kx18 Synchronous Pipelined SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.
Revision History
Rev. No.
Rev. 0.0
Rev. 0.1
Rev. 0.2
Rev. 0.3
Rev. 1.0
Rev. 2.0
Rev. 3.0
Remark
Advance
Advance
Advance
Preliminary
Final
Final
Final
History
- Initial Document.
- ZQ tolerance changed from 10% to 15%
- V
DDQ
changed to support wide range from 1.4V to 2.0V
- Functional Block diagram changed.
- Absolute Maximum ratings VDDQ changed from 3.13V to 2.825V
- Recommended DC Operating Conditions for V
REF
and V
CM
-CLK changed
from Min 0.6V to 0.68V, from Max 0.9V to 1.0V
- Package thermal characteristics added.
- Absolute Maximum Rating VDDQ changed from 2.825V to 2.4V
- Function Description modified
Draft Date
June. 2000
Aug. 2000
Dec. 2000
Feb. 2001
May. 2001
Jan. 2002
Mar. 2002
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