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參數(shù)資料
| 型號(hào)： | K7M801825B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx36 & 512Kx18-Bit Flow Through NtRAM |
| 中文描述： | 256Kx36 |
| 文件頁(yè)數(shù)： | 9/18頁(yè) |
| 文件大?。?/td> | 375K |
| 代理商： | K7M801825B |
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256Kx36 & 512Kx18 Flow-Through N
t
RAM
TM
- 9 -
Rev 3.0
Nov. 2003
K7M803625B
K7M801825B
ASYNCHRONOUS TRUTH TABLE
Operation
ZZ
OE
I/O STATUS
Sleep Mode
H
X
High-Z
Read
L
L
DQ
L
H
High-Z
Write
L
X
Din, High-Z
Deselected
L
X
High-Z
Notes
1. X means "Don
′
t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
3. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
ABSOLUTE MAXIMUM RATINGS*
*Notes :
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on V
DD
Supply Relative to V
SS
V
DD
-0.3 to 4.6
V
Voltage on Any Other Pin Relative to V
SS
V
IN
-0.3 to V
DD
+0.3
V
Power Dissipation
P
D
1.4
W
Storage Temperature
T
STG
-65 to 150
°
C
Operating Temperature
Commercial
T
OPR
0 to 70
°
C
Industrial
T
OPR
-40 to 85
°
C
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
°
C
CAPACITANCE*
(T
A
=25
°
C, f=1MHz)
*Note
:
Sampled not 100% tested.
PARAMETER
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Input Capacitance
C
IN
V
IN
=0V
-
5
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
7
pF
OPERATING CONDITIONS at 3.3V I/O
(0
°
C
≤
T
A
≤
70
°
C)
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD
3.135
3.3
3.465
V
V
DDQ
3.135
3.3
3.465
V
Ground
V
SS
0
0
0
V
OPERATING CONDITIONS at 2.5V I/O
(0
°
C
≤
T
A
≤
70
°
C)
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD
3.135
3.3
3.465
V
V
DDQ
2.375
2.5
2.9
V
Ground
V
SS
0
0
0
V
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相關(guān)代理商/技術(shù)參數(shù) |
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| K7M801825B-QC65 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Pipelined NtRAMTM |
| K7M801825B-QC65/75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Flow Through NtRAM |
| K7M801825B-QC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| K7M803625A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 Flow-Through NtRAM TM |
| K7M803625B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Flow Through NtRAM |
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