參數(shù)資料
型號(hào): K7M163625M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Kx36 & 1Mx18 Flow-Through NtRAM-TM
中文描述: 512Kx36
文件頁(yè)數(shù): 10/20頁(yè)
文件大小: 364K
代理商: K7M163625M
512Kx36 & 1Mx18 Flow-Through N
t
RAM
TM
- 10 -
Rev 3.0
February 2001
K7M161825M
K7M163625M
ASYNCHRONOUS TRUTH TABLE
Operation
ZZ
OE
I/O STATUS
Sleep Mode
H
X
High-Z
Read
L
L
DQ
L
H
High-Z
Write
L
X
Din, High-Z
Deselected
L
X
High-Z
Notes
1. X means "Don
t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
3. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
ABSOLUTE MAXIMUM RATINGS*
*Notes :
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on V
DD
Supply Relative to V
SS
V
DD
-0.3 to 4.6
V
Voltage on Any Other Pin Relative to V
SS
V
IN
-0.3 to 4.6
V
Power Dissipation
P
D
1.6
W
Storage Temperature
T
STG
-65 to 150
°
C
Operating Temperature
T
OPR
0 to 70
°
C
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
°
C
CAPACITANCE*
(T
A
=25
°
C, f=1MHz)
*Note
:
Sampled not 100% tested.
PARAMETER
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Input Capacitance
C
IN
V
IN
=0V
-
7
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
9
pF
OPERATING CONDITIONS at 3.3V I/O
(0
°
C
T
A
70
°
C)
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD
3.135
3.3
3.465
V
V
DDQ
3.135
3.3
3.465
V
Ground
V
SS
0
0
0
V
OPERATING CONDITIONS at 2.5V I/O
(0
°
C
T
A
70
°
C)
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD
3.135
3.3
3.465
V
V
DDQ
2.375
2.5
2.9
V
Ground
V
SS
0
0
0
V
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