參數(shù)資料
型號： K6X1008T2D-TQ85
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： DRAM
英文描述： 128Kx8 bit Low Power CMOS Static RAM
中文描述： 128Kx8位低功耗CMOS靜態(tài)RAM
文件頁數(shù)： 1/9頁
文件大小： 153K
代理商： K6X1008T2D-TQ85
CMOS SRAM
K6X1008T2D Family
Revision 1.0
September 2003
1
Document Title
128Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No.
0.0
0.1
0.2
1.0
Remark
Preliminary
Preliminary
Preliminary
Final
History
Initial draft
Revised
- Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type.
- Added Commercial product.
- Added 55ns product( Vcc = 3.0V~3.6V)
Revised
- Added Lead Free 32-SOP-525 Product
- Added Lead Free 32-TSOP1-0820F Product
Finalized
- Changed I
CC
from 3mA to 2mA
- Changed I
CC
2 from 25mA to 20mA
- Changed I
SB
1
(Commercial)
from 10
μ
A to 6
μ
A
- Changed I
SB
1
(industrial)
from 10
μ
A to 6
μ
A
- Changed I
SB
1
(Automotive)
from 20
μ
A to 10
μ
A
- Changed I
DR
(Commercial)
from 10
μ
A to 6
μ
A
- Changed I
DR
(industrial)
from 10
μ
A to 6
μ
A
- Changed I
DR
(Automotive)
from 20
μ
A to 10
μ
A
Draft Data
July 15, 2002
December 4, 2002
June 23, 2003
September 16, 2003
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
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