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參數(shù)資料
| 型號： | K6X1008C2D-TQ70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | DRAM |
| 英文描述： | 128Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 128Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 176K |
| 代理商： | K6X1008C2D-TQ70 |
CMOS SRAM
K6X1008C2D Family
Revision 1.0
September 2003
2
128Kx8 bit Low Power full CMOS Static RAM
FEATURES
Process Technology: Full CMOS
Organization: 128K x 8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-DIP-600, 32-SOP-525,
32-SOP-525, 32-TSOP1-0820F
GENERAL DESCRIPTION
The K6X1008C2D families are fabricated by SAMSUNG
′
s
advanced CMOS process technology. The families support
verious operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
PIN DESCRIPTION
Name
Function
CS
1
, CS
2
Chip Select Input
OE
Output Enable Input
WE
Write Enable Input
I/O
1
~I/O
8
Data Inputs/Outputs
A
0
~A
16
Address Inputs
Vcc
Power
Vss
Ground
NC
No Connection
PRODUCT FAMILY
1. The parameters are tested with 50pF test load
Product Family
Operating
Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
10
μ
A
Operating
(I
CC2,
Max)
K6X1008C2D-B
Commercial(0~70
°
C)
4.5~5.5V
55
1)
/70ns
25mA
32-DIP-600, 32-SOP-525,
32-SOP-525
32-TSOP1-0820F
K6X1008C2D-F
Industrial(-40~85
°
C)
15
μ
A
K6X1008C2D-Q
Automotive(-40~125
°
C)
25
μ
A
32-SOP-525, 32-TSOP1-0820F
FUNCTIONAL BLOCK DIAGRAM
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
I/O Circuit
Column select
Clk gen.
Row
select
I/O
1
Data
cont
Data
cont
I/O
8
CS
1
WE
OE
CS
2
Control
logic
A11
A9
A8
WE
A15
VNC
A12
A7
A6
A5
A4
OE
CS1
I/O8
I/O7
I/O2
I/O1
A0
A1
A2
A3
Type1-Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-DIP
32-TSOP
32-SOP
Column Addresses
Row
addresses
相關PDF資料 |
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|---|---|
| K6X1008C2D-F | 128Kx8 bit Low Power CMOS Static RAM |
| K6X1008C2D-GB55 | 128Kx8 bit Low Power CMOS Static RAM |
| K6X1008C2D-GB70 | 128Kx8 bit Low Power CMOS Static RAM |
| K6X1008C2D-GF55 | 128Kx8 bit Low Power CMOS Static RAM |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K6X1008T2D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6X1008T2D-B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6X1008T2D-BB551 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6X1008T2D-BB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6X1008T2D-BB85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
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