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參數(shù)資料
| 型號： | K6X0808T1D-GF70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 32Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 153K |
| 代理商： | K6X0808T1D-GF70 |
CMOS SRAM
K6X0808T1D Family
Revision 1.0
December 2003
5
AC CHARACTERISTICS
(V
CC
=2.7~3.6V, Industrial product:T
A
=-40 to 85
°
C, Automotive product:T
A
=-40 to 125
°
C
)
Parameter List
Symbol
Speed Bins
Units
70ns
85ns
Min
Max
Min
Max
Read
Read Cycle Time
t
RC
70
-
85
-
ns
Address Access Time
t
AA
-
70
-
85
ns
Chip Select to Output
t
CO
-
70
-
85
ns
Output Enable to Valid Output
t
OE
-
35
-
40
ns
Chip Select to Low-Z Output
t
LZ
10
-
10
-
ns
Output Enable to Low-Z Output
t
OLZ
5
-
5
-
ns
Chip Disable to High-Z Output
t
HZ
0
25
0
25
ns
Output Disable to High-Z Output
t
OHZ
0
25
0
25
ns
Output Hold from Address Change
t
OH
10
-
15
-
ns
Write
Write Cycle Time
t
WC
70
-
85
-
ns
Chip Select to End of Write
t
CW
60
-
70
-
ns
Address Set-up Time
t
AS
0
-
0
-
ns
Address Valid to End of Write
t
AW
60
-
70
-
ns
Write Pulse Width
t
WP
50
-
60
-
ns
Write Recovery Time
t
WR
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
25
0
30
ns
Data to Write Time Overlap
t
DW
25
-
35
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
ns
End Write to Output Low-Z
t
OW
5
-
5
-
ns
C
L
1)
1. Including scope and jig capacitance
AC OPERATING CONDITIONS
TEST CONDITIONS
( Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage:1.5V
Output load(see right): C
L
=100pF+1TTL
C
L
=30pF+1TTL
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Min
Typ
Max
Unit
Vcc for data retention
V
DR
CS
1
≥
Vcc-0.2V
2.0
-
3.6
V
Data retention current
I
DR
Vcc=3.0V, CS
1
≥
Vcc-0.2V
K6X0808T1D-F
-
-
6
μ
A
μ
A
K6X0808T1D-Q
10
Data retention set-up time
t
SDR
See data retention waveform
0
-
-
ms
Recovery time
t
RDR
5
-
-
相關PDF資料 |
PDF描述 |
|---|---|
| K6X0808T1D-GF85 | 32Kx8 bit Low Power CMOS Static RAM |
| K6X0808T1D-GQ70 | 32Kx8 bit Low Power CMOS Static RAM |
| K6X0808T1D-GQ85 | 32Kx8 bit Low Power CMOS Static RAM |
| K6X0808T1D-NB70 | 32Kx8 bit Low Power CMOS Static RAM |
| K6X0808T1D-NB85 | 32Kx8 bit Low Power CMOS Static RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K6X0808T1D-GF85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
| K6X0808T1D-GQ70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
| K6X0808T1D-GQ85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
| K6X0808T1D-NB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
| K6X0808T1D-NB85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
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