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參數(shù)資料
| 型號： | K6T4008V1C-TF70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 512Kx8位低功耗和低電壓的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 186K |
| 代理商： | K6T4008V1C-TF70 |
K6T4008V1C, K6T4008U1C Family
CMOS SRAM
Revision 1.0
January 1999
6
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
CS
Address
OE
Data out
NOTES
(READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
t
OH
t
AA
t
CO1
t
OLZ
t
LZ
t
OHZ
t
HZ
t
RC
t
OE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6T4008V1C-TF85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4008V1C-VB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4008V1C-VB70000 | 制造商:Samsung SDI 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 70ns 32-Pin TSOP-II Tray |
| K6T4008V1C-VB70T00 | 制造商:Samsung SDI 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 70ns 32-Pin TSOP-II T/R |
| K6T4008V1C-VB85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
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