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參數資料
| 型號： | K6T4008V1C-TB85 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 512Kx8位低功耗和低電壓的CMOS靜態(tài)RAM |
| 文件頁數： | 10/10頁 |
| 文件大小： | 186K |
| 代理商： | K6T4008V1C-TB85 |
K6T4008V1C, K6T4008U1C Family
CMOS SRAM
Revision 1.0
January 1999
10
32 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F)
0~8
°
#32
20.95
±
0.10
0.825
±
0.004
MAX
21.35
0.841
MAX
1.00
±
0.10
0.039
±
0.004
1.20
0.047
MIN
0.002
0.05
0.004 MAX
0.10 MAX
#1
( 0.037
1
0
0.15
+0.004
0.006
-0.002
11.76
±
0.20
0.463
±
0.008
#17
#16
( 0.020
0.45~0.75
0.018 ~ 0.030
( 0.010
1.27
0.050
0.40
±
0.10
0.016
±
0.004
PACKAGE DIMENSIONS
32 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400R)
0~8
°
#32
#1
1
0
0.15
+0.10
0.006
+0.004
11.76
±
0.20
0.463
±
0.008
#17
#16
( 0.020
0.45 ~0.75
0.018 ~ 0.030
( 0.010
20.95
±
0.10
0.825
±
0.004
MAX
21.35
0.841
MAX
1.00
±
0.10
0.039
±
0.004
1.20
0.047
MIN
0.002
0.05
0.004 MAX
0.10 MAX
( 0.037
1.27
0.050
0.40
±
0.10
0.016
±
0.004
Units: millimeters(inches)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| K6T4008V1C-TF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4008V1C-TF85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4008V1C-VB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4008V1C-VB70000 | 制造商:Samsung SDI 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 70ns 32-Pin TSOP-II Tray |
| K6T4008V1C-VB70T00 | 制造商:Samsung SDI 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 70ns 32-Pin TSOP-II T/R |
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