參數(shù)資料
型號: K6T4008V1C-MF85
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
中文描述: 512Kx8位低功耗和低電壓的CMOS靜態(tài)RAM
文件頁數(shù): 6/10頁
文件大小: 186K
代理商: K6T4008V1C-MF85
K6T4008V1C, K6T4008U1C Family
CMOS SRAM
Revision 1.0
January 1999
6
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
CS
Address
OE
Data out
NOTES
(READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
t
OH
t
AA
t
CO1
t
OLZ
t
LZ
t
OHZ
t
HZ
t
RC
t
OE
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