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參數(shù)資料
| 型號(hào)： | K6T4008V1C-MB70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 512Kx8位低功耗和低電壓的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 186K |
| 代理商： | K6T4008V1C-MB70 |
K6T4008V1C, K6T4008U1C Family
CMOS SRAM
Revision 1.0
January 1999
2
512K
×
8 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The K6T4008V1C and K6T4008U1C families are fabricated by
SAMSUNG
′
s advanced CMOS process technology. The fami-
lies support various operating temperature range and have var-
ious package type for user flexibility of system design. The
families also support low data retention voltage for battery
back-up operation with low data retention current.
FEATURES
Process Technology: TFT
Organization: 512K
×
8
Power Supply Voltage
K6T4008V1C Family: 3.0~3.6V
K6T4008U1C Family: 2.7~3.3V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-SOP-525, 32-TSOP2-400F/R
32-TSOP1-0820F, 32-TSOP1-0813.4F
PIN DESCRIPTION
Name
Function
Name
Function
A
0
~A
18
Address Inputs
Vcc
Power
WE
Write Enable Input
Vss
Ground
CS
Chip Select Input
I/O
1
~I/O
8
Data Inputs/Outputs
OE
Output Enable Input
PRODUCT FAMILY
1. The paramerter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
K6T4008V1C-B
Commercial(0~70
°
C)
3.0~3.6V
70
1)
/85ns
15
μ
A
30mA
32-SOP
32-TSOP2-F/R
32-TSOP1-F
32-sTSOP1-F
K6T4008U1C-B
2.7~3.3V
70
1)
/85/100ns
K6T4008V1C-F
Industrial(-40~85
°
C)
3.0~3.6V
70
1)
/85ns
20
μ
A
K6T4008U1C-F
2.7~3.3V
70
1)
/85/100ns
FUNCTIONAL BLOCK DIAGRAM
32-SOP
32-TSOP2
(Forward)
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-TSOP2
(Reverse)
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A18
A18
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
A15
Precharge circuit.
Memory array
1024 rows
512
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A2 A3 A8 A9 A10
A13
A11
A0
A1
A4
A5
A6
A7
A14
CS
WE
I/O
1
Data
cont
Data
cont
OE
I/O
8
A12
A16
A18
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
32-TSOP1
32-
TSOP1
(Forward)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A17
Control
logic
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6T4008V1C-MB85 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4008V1C-MF70 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4008V1C-MF85 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4008V1C-TB70 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4008V1C-TB85 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
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