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參數(shù)資料
| 型號(hào)： | K6T4008V1C-F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 512Kx8位低功耗和低電壓的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大小： | 186K |
| 代理商： | K6T4008V1C-F |
K6T4008V1C, K6T4008U1C Family
CMOS SRAM
Revision 1.0
January 1999
4
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. Commercial Product : T
A
=0 to 70
°
C, otherwise specified
Industrial Product : T
A
=-40 to 85
°
C, otherwise specified
2. Overshoot : V
CC
+2.0V in case of pulse width
≤
30ns
3. Undershoot : -2.0V in case of pulse width
≤
30ns
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Product
Min
Typ
Max
Unit
Supply voltage
Vcc
K6T4008V1C Family
K6T4008U1C Family
All Family
3.0
2.7
0
3.3
3.0
0
3.6
3.3
0
V
Ground
Vss
V
Input high voltage
V
IH
K6T4008V1C, K6T4008U1C Family
2.2
-
Vcc+0.3
2)
0.6
V
Input low voltage
V
IL
K6T4008V1C, K6T4008U1C Family
-0.3
3)
-
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
1. Industrial product = 20
μ
A
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
μ
A
Output leakage current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
IO
=Vss to Vcc
-1
-
1
Operating power supply current
I
CC
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
, Read
-
-
4
mA
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty, I
IO
=0mA CS
≤
0.2V,V
IN
≤
0.2V or V
IN
≥
Vcc-0.2V
-
-
4
mA
I
CC2
Cycle time=Min, 100% duty, I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
-
-
30
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-1.0mA
2.2
-
-
V
Standby Current(TTL)
I
SB
CS=V
IH
, Other inputs = V
IL
or V
IH
-
-
0.3
mA
Standby Current (CMOS)
I
SB1
CS
≥
Vcc-0.2V, Other inputs=0~Vcc
-
-
15
1)
μ
A
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| K6T4008V1C-GB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4008V1C-GB85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4008V1C-GF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4008V1C-GF85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4008V1C-MB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
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