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參數(shù)資料
| 型號(hào)： | K6T4008C1C-GB55 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 512Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 171K |
| 代理商： | K6T4008C1C-GB55 |
K6T4008C1B Family
CMOS SRAM
Revision 3.0
September 1998
4
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. Commercial Product: T
A
=0 to 70
°
C, otherwise specified
Industrial Product: T
A
=-40 to 85
°
C, otherwise specified
2. Overshoot: V
CC
+3.0V in case of pulse width
≤
30ns
3. Undershoot: -3.0V in case of pulse width
≤
30ns
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
4.5
5.0
5.5
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
2.2
-
Vcc+0.5
2)
0.8
V
Input low voltage
V
IL
-0.5
3)
-
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
μ
A
Output leakage current
I
LO
CS=V
IH
or OE=V
IH
or
WE=V
IL
, V
IO
=Vss to Vcc
-1
-
1
Operating power supply
I
CC
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
, Read
-
7.5
15
mA
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty, I
IO
=0mA
CS
≤
0.2V, V
IN
≥
0.2V or V
IN
≥
Vcc-0.2V
Read
-
4
10
mA
Write
-
27
40
I
CC2
Cycle time=Min, 100% duty, I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
-
65
80
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-1.0mA
2.4
-
-
V
Standby Current(TTL)
I
SB
CS=V
IH
, Other inputs = V
IL
or V
IH
-
-
3
mA
Standby Current(CMOS)
I
SB1
CS
≥
Vcc-0.2V, Other inputs=0~Vcc
K6T4008C1B-L
-
2
100
μ
A
μ
A
μ
A
K6T4008C1B-B
-
1
20
K6T4008C1B-P
-
2
100
K6T4008C1B-F
-
1
50
μ
A
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