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參數(shù)資料
| 型號： | K6T1008C2E |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 128Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 190K |
| 代理商： | K6T1008C2E |
CMOS SRAM
K6T1008C2E Family
Revision 3.0
March 2000
4
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. Commercial Product: T
A
=0 to 70
°
C
Industrial Product: T
A
=-40 to 85
°
C, otherwise specified.
2. Overshoot: Vcc+3.0V in case of pulse width
≤
30ns.
3. Undershoot: -3.0V in case of pulse width
≤
30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Product
Min
Typ
Max
Unit
Supply voltage
Vcc
K6T1008C2E Family
4.5
5.0
5.5
V
Ground
Vss
All Family
0
0
0
V
Input high voltage
V
IH
K6T1008C2E Family
2.2
-
Vcc+0.5
2)
0.8
V
Input low voltage
V
IL
K6T1008C2E Family
-0.5
3)
-
V
CAPACITANCE
1
)
(f=1MHz, TA=25
°
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
6
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
8
pF
DC AND OPERATING CHARACTERISTICS
1. 50
μ
A for Low power product, in case of Low Low power products are comercial=10
μ
A, industrial=15
μ
A.
Item
Symbol
Test Conditions
Min Typ Max Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
μ
A
Output leakage current
I
LO
CS
1
=V
IH
or CS
2
=V
IL
or OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
-1
-
1
Operating power supply current
I
CC
I
IO
=0mA, CS
1
=V
IL
, CS
2
=V
IH,
V
IN
=V
IH
or V
IL
, Read
-
-
10
mA
Average operating current
I
CC1
Cycle time=1
μ
s,
100%duty, I
IO
=0mA, CS
1
≤
0.2V, CS
2
≥
Vcc-0.2V, V
IN
≤
0.2V
or V
IN
≥
V
CC
-0.2V
-
-
7
mA
I
CC2
Cycle time=Min, 100% duty,
I
IO
=0mA, CS
1
=V
IL
, CS
2
=V
IH,
V
IN
=V
IH
or V
IL
-
-
50
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-1.0mA
2.4
-
-
V
Standby Current(TTL)
I
SB
CS
1
=V
IH
, CS2=V
IL
, Other inputs=V
IH
or V
IL
-
-
3
mA
Standby Current(CMOS)
I
SB1
CS
1
≥
Vcc-0.2V, CS
2
≥
Vcc-0.2V or CS
2
≤
0.2V, Other inputs=0~Vcc
-
-
50
1)
μ
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6T1008C2E-RF70 | 128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-B | 128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-DB55 | 128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-DB70 | 128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-DL55 | 128Kx8 bit Low Power CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6T1008C2E-B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-DB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-DB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-DL55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-DL70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
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